[en] The bases of Rutherford ion backscattering and its combination with channeling effect technique are reviewed. This combined method is recently referred to as Backscattering Spectrometry. The measurement of chemical compositions, the detection of crystal defects etc are dealt with. Comparison with other surface analysis methods is also given. The review was delivered as a lecture during the ''International School for Surface Physics'' (Varna, Bulgaria, Sep 18 - Oct 20, 1980). (author)

[en] The basic principles of backscattering spectrometry are reviewed. The applications of this method in studying silicon surfaces, diffusion and lattice defects are given. (P.L.)

[en] Work in different laboratories on epitaxial regrowth during thermal annealing of implanted amorphous layers will be reviewed. Emphasis will be put on substrate orientation dependence, thermal history and impurity effects. Examples will be taken from Si and SOS results. Recently, single laser pulses were applied to achieve crystal annealing after implantation. Both recrystallisation of implanted amorphous layers and impurity effects were re-investigated by this technique. As a result of this non-equilibrium process, special effects were found in phase transitions (not only for implanted specimens), diffusion and solubility properties of impurities. In some cases improved electrical activity and carrier lifetime were found compared to thermal annealing. (author)

[en] Carbon nanotubes were grown by the evaporation of a fullerene/Ni particle mixture in vacuum, using 532 nm laser pulses of 12-28 μJ from a Nd YAG laser. The evaporated material was deposited on a freshly cleaved graphite (HOPG) surface and the samples were investigated by scanning tunneling microscopy (STM) and AFM. In the present work, we focus on the Y-branched and coiled carbon nanotubes, the formation of which supposes the incorporation of non-hexagonal rings in the hexagonal graphitic network. The regularity of the observed coils is an indication that the incorporation of the pentagons and heptagons occurred in a very regular way. The possible atomic structure of the coiled carbon nanotubes is discussed

[en] Using glancing incidence (a target tilt between 80 deg-83 deg), the depth resolution of ¹⁶O(α,α)¹⁶O resonance for oxygen detection has been improved by a factor 5-7 depending on the depth. The more buried the oxide, the more straggling contribution is observed. Besides, at present scattering geometry an additionally 3.5 times better detection limit is achieved. (author)

[en] Annealing behavior of radiation damage formed by the implantation of ⁷⁵Ge⁺ ions into silicon was measured by channelling, with concentrations of germanium up to 14 at.% in (100) Si. At higher concentrations after annealing residual damage was located both at the interface of the damaged and undamaged crystal and at the surface. The interface defect was attributed to lattice mismatch. As for the suface defects, despite reasonable implantation conditions, the affect of recoiled oxygen or cabon cannot be ruled out. The kinetics of regrowth was not affected by the presence of Ge atoms. Apart from atoms in stable damaged regions, the Ge atoms showed highly substitutional character. (orig.)

[en] A correlation between the amount of disorder measured by channeling and the trajectory of measured ellipsometric angles (PSIδ) is reported. The implantation was performed by ₁₁B⁺, ₂₈Si⁺, ₃₁P⁺, ₄₀Ar⁺, ₇₂Ge⁺, ₇₅As⁺, ₂₀₉Bi⁺ ions at room temperature. For fully amorphous samples the thickness data were obtained from channeling and the complex refractive index originated from a 145 nm thick amorphous layer. These experimental values were used to compute a theoretical curve in the PSI-δ plane. The good agreement between the theoretical curve and experimental data provides a non-destructive, rapid and non-contact method to estimate the thickness of the amorphous layer. For buried and partially disordered layers a qualitative interpretation of different trajectories depending on the ion species and other implantation conditions such as energy and dose in the PSI-δ plane can be given on the basis of channeling measurements in certain cases. It is also pointed out that plasma stripping plays an important role in preparing implanted samples for ellipsometry by removing the polymerized hydrocarbon film without affecting the disordered layer. (author)

[en] During MeV ¹⁴N⁺ backscattering analysis to detect sub-monolayer heavy impurities, a ''beam effect'', i.e. high impurity loss was found. To clarify the situation a systematic study was done on gold evaporated films (in the thickness range of 0.5-3200 atom/nm²) onto silicon. Results suggest that sputtering of cascades induced by energetic nitrogen ions is responsible for the phenomenon. The sputtering yield of gold was a linear function of surface coverage in the range of 0.5-130 atom/nm². For thick overlayers ((>=) 800 atom/nm²) a saturation value of S approximately equal to 0.8 gold/N⁺ was found. Between these two regions intermediate behaviour was experienced. A rough theoretical model is outlined for overlayer sputtering in the MeV energy region. (author)

[en] The present paper describes the results of ionization annealing of P and As implanted Si carried out at 480⁰C and 400⁰C, respectively. Van der Pauw patterns for Hall effect and sheet resistivity measurements were prepared on the samples of <111> p-type Si of the resistivity of about 10 ohm cm. (author)

[en] A silicon wedge mask with thickness varying from approximately 5 μm to a few hundred μm has been used for converting the depth distribution of defect concentration induced by 4 MeV H⁺ ion implantation in silicon to a lateral scale on the surface, i.e. the distance from the edge of the wedge mask. Thus, using proper devices fabricated on bulk Si prior to ion implantation, depth profiles of the generation lifetime of minority charge carriers and of the different defect densities can be measured by the transient capacitance method and by Deep Level Transient Spectroscopy (DLTS), respectively. The distribution of lifetime follows well that of the implantation induced vacancies calculated by the TRIM code in the applied dose range (from 1x10¹⁰ to 3x10¹¹ H⁺/cm²). The correlation between implantation dose and lifetime decrease is also discussed