[en] In order to compensate for the loss of performance when scaling resonant sensors down to NEMS, it proves extremely useful to study the behavior of resonators up to very high displacements and hence high nonlinearities. This work describes a comprehensive nonlinear multiphysics model based on the Euler-Bernoulli equation which includes both mechanical and electrostatic nonlinearities valid up to displacements comparable to the gap in the case of an electrostatically actuated doubly clamped beam. Moreover, the model takes into account the fringing field effects, significant for thin resonators. The model has been compared to both numerical integrations and electrical measurements of devices fabricated on 200 mm SOI wafers; it shows very good agreement with both. An important contribution of this work is the provision for closed-form expressions of the critical amplitude and the pull-in domain initiation amplitude including all nonlinearities. This model allows designers to cancel out nonlinearities by tuning some design parameters and thus gives the possibility to drive the resonator beyond its critical amplitude. Consequently, the sensor performance can be enhanced to the maximum below the pull-in instability, while keeping a linear behavior.

[en] In the field of resonant nano-electro-mechanical system (NEMS) design, it is a common misconception that large-amplitude motion, and thus large signal-to-noise ratio, can only be achieved at the risk of oscillator instability. In the present paper, we show that very simple closed-loop control schemes can be used to achieve stable large-amplitude motion of a resonant structure even when jump resonance (caused by electrostatic softening or Duffing hardening) is present in its frequency response. We focus on the case of a resonant accelerometer sensing cell, consisting of a nonlinear clamped-clamped beam with electrostatic actuation and detection, maintained in an oscillation state with pulses of electrostatic force that are delivered whenever the detected signal (the position of the beam) crosses zero. We show that the proposed feedback scheme ensures the stability of the motion of the beam much beyond the critical Duffing amplitude and that, if the parameters of the beam are correctly chosen, one can achieve almost full-gap travel range without incurring electrostatic pull-in. These results are illustrated and validated with transient simulations of the nonlinear closed-loop system.

[en] We report an actuation/detection scheme with a top-down nanoelectromechanical system (NEMS) for frequency shift based sensing applications with outstanding performance. It relies on electrostatic actuation and piezoresistive nanowire gauges for in-plane motion transduction. The process fabrication is fully CMOS (complementary metal-oxide-semiconductor) compatible. The results show a very large dynamic range of more than 100 dB and an unprecedented signal to background ratio of 69 dB providing an improvement of two orders of magnitude in the detection efficiency presented in the state of the art in NEMS fields. Such a dynamic range results from both negligible 1/f noise and very low Johnson noise compared to the thermomechanical noise. This simple low power detection scheme paves the way for new class of robust mass resonant sensors.

[en] This paper describes a comprehensive nonlinear multiphysics model based on the Euler–Bernoulli equation that remains valid up to large displacements in the case of electrostatically actuated nanocantilevers. This purely analytical model takes into account the fringing field effects which are significant for thin resonators. Analytical simulations show very good agreement with experimental electrical measurements of silicon nanodevices using wafer-scale nanostencil lithography (nSL), monolithically integrated with CMOS circuits. Close-form expressions of the critical amplitude are provided in order to compare the dynamic ranges of NEMS cantilevers and doubly clamped beams. This model allows designers to cancel out nonlinearities by tuning some design parameters and thus gives the possibility of driving the cantilever beyond its critical amplitude. Consequently, the sensor performance can be enhanced by being optimally driven at very large amplitude, while maintaining linear behavior

[en] This work reports on top-down nanoelectromechanical resonators, which are among the smallest resonators listed in the literature. To overcome the fact that their electromechanical transduction is intrinsically very challenging due to their very high frequency (100 MHz) and ultimate size (each resonator is a 1.2 μm long, 100 nm wide, 20 nm thick silicon beam with 100 nm long and 30 nm wide piezoresistive lateral nanowire gauges), they have been monolithically integrated with an advanced fully depleted SOI CMOS technology. By advantageously combining the unique benefits of nanomechanics and nanoelectronics, this hybrid NEMS-CMOS device paves the way for novel breakthrough applications, such as NEMS-based mass spectrometry or hybrid NEMS/CMOS logic, which cannot be fully implemented without this association. (paper)

[en] Due to low power operation, intrinsic integrability and compatibility with CMOS processing, aluminum nitride (AlN) piezoelectric (PZE) microcantilevers are a very attractive paradigm for resonant gas sensing. In this paper, we theoretically investigate their ultimate limit of detection and enunciate design rules for performance optimization. The reduction of the AlN layer thickness is found to be critical. We further report the successful development and implementation in cantilever structures with a 50 nm thick active PZE AlN layer. Material characterizations demonstrate that the PZE e_3_1 coefficient can remain as high as 0.8 C m"−"2. Electrically transduced frequency responses of the fabricated devices are in good agreement with analytical predictions. Finally, we demonstrate the excellent frequency stability with a 10"−"8 minimum Allan deviation. This exceptionally low noise operation allows us to expect a limit of detection as low as 53 zg µm"−"2 and demonstrate the strong potential of AlN PZE microcantilevers for high resolution gas detection