[en] Here, the high magnetic field helicon experiment system is a helicon wave plasma (HWP) source device in a high axial magnetic field (B₀) developed for plasma–wall interactions studies for fusion reactors. This HWP was realized at low pressure (5 × 10^–3 – 10 Pa) and a RF (radio frequency, 13.56 MHz) power (maximum power of 2 kW) using an internal right helical antenna (5 cm in diameter by 18 cm long) with a maximum B 0 of 6300 G. Ar HWP with electron density ~10¹⁸–10²⁰ m^–3 and electron temperature ~4–7 eV was produced at high B₀ of 5100 G, with an RF power of 1500 W. Maximum Ar+ ion flux of 7.8 × 10²³ m^–2 s^–1 with a bright blue core plasma was obtained at a high B₀ of 2700 G and an RF power of 1500 W without bias. Plasma energy and mass spectrometer studies indicate that Ar⁺ ion-beams of 40.1 eV are formed, which are supersonic (~3.1c _s). The effect of Ar HWP discharge cleaning on the wall conditioning are investigated by using the mass spectrometry. And the consequent plasma parameters will result in favorable wall conditioning with a removal rate of 1.1 × 10²⁴ N₂/m²h.

[en] A high growth rate fabrication of diamond-like carbon (DLC) films at room temperature was achieved by helicon wave plasma chemical vapor deposition (HWP-CVD) using Ar/CH₄ gas mixtures. The microstructure and morphology of the films were characterized by Raman spectroscopy and scanning electron microscopy. The diagnosis of plasma excited by a helicon wave was measured by optical emission spectroscopy and a Langmuir probe. The mechanism of high growth rate fabrication for DLC films by HWP-CVD has been discussed. The growth rate of the DLC films reaches a maximum value of 54 μm h⁻¹ at the CH₄ flow rate of 85 sccm, which is attributed to the higher plasma density during the helicon wave plasma discharge. The CH and H_α radicals play an important role in the growth of DLC films. The results show that the H_α radicals are beneficial to the formation and stabilization of C=C bond from sp² to sp³. (paper)