[en] In this paper the effects of plasma- enhancement on MOCVD for growing superconducting YBa₂Cu₃O_x thin films is studied. It is revealed that plasma-enhancement accelerates crystallization of YBa₂Cu₃O_x so that growth temperatures of superconducting films can be decreased by about 150 degrees C. Thin films grown by plasma-enhanced MOCVD at 515 degrees C and 580 degrees C indicate zero-resistivity temperatures of 60K and 84K, respectively. Critical current density in the film grown by plasma-enhanced MOCVD at 580 degrees C is 10⁵ A/cm² at 77K. Infrared absorption spectroscopy and ultraviolet and visible emission spectroscopy clarify that plasma excite the metalorganic compounds and that this excitation promotes oxidation of metalorganic compounds and crystallization of YBa₂Cu₃O_x

[en] Thin YBa₂Cu₃O_7-x films were grown by thermal and plasma enhanced MOCVD, and the effects of growth temperature on the film properties were studied. The crystallinity of the films deteriorated with growth temperature, so superconductivity decreased with growth temperature. Thin films grown by thermal MOCVD at 600 degrees C, 650 degrees C, 700 degrees C and 750 degrees C had zero-resistivity at 10 K, 71 K, 83 K and 84 K, respectively. The growth temperature for superconducting films is decreased by plasma enhancement. Thin films grown by plasma enhanced MOCVD at 515 degrees C and 580 degrees C had zero-resistivity at 60 K and 85 K. The critical current density of films grown by plasma enhanced MOCVD at 580 degrees C was 10⁵ A/cm² at 77 K

[en] The lateral profile of boron in an actual microdevice was obtained by 3D analysis--using the newly developed resonance photoionization sputtered neutral mass spectrometry (SNMS) instrument--with a detection limit of 10¹⁸ atoms/cm³. The primary ion beam optical system of the instrument uses a Ga liquid metal ion source. The Ga beam diameter was about 30 nm and the ion beam current was about 60 pA. The analysis time to get the profile was about 40 min. Boron was excited by using one ultraviolet photon (249.7 nm) and by one visible photon (563 nm), and then it was ionized by an infrared photon (1064 nm): the so-called three-color resonance ionization. Lateral diffusion profile of boron in the device after chemical vapor deposition (CVD) including heating the wafer was also obtained. These results mean that this SNMS instrument will enable us to easily determine semiconductor processing conditions

[en] A resonance-multiphoton-ionization sputtered neutral mass spectrometry (SNMS) instrument for submicron microarea analysis was developed. The laser system for producing resonance ionization in this SNMS consists of two yttrium aluminum garnet (YAG) lasers and three dye lasers. A combination of these laser beams, which makes available a maximum of four colors from the dye lasers and YAG lasers, can be simultaneously focused above a sample. The primary-ion-beam optical system, which uses a liquid-metal ion source, was developed specifically for this instrument. This system provides an ion-beam current density of more than 8 A/cm² at a beam diameter of about 30 nm. The depth profile of iron in a submicrometer microarea on a silicon wafer was obtained at a useful yield of about 5%, and the lateral profile of phosphorus in a rectangle area about 1400x500 nm² was obtained at useful yield of about 0.2%