[en] An optical microscopy analysis has been carried out of the surface morphology of YBa₂Cu₃O_7-y films deposited on ZrO₂(Y₂O₃)(100) substrates by two synchronized IR lasers ablation. It was found that the growth of microparties violating the smoothness of the film surface takes place during the deposition process at substrate temperature t_s approx 700 C. The growth of microparticles may also continue after the deposition completion if the substance remains at the same temperature for some more time. The microparticle formation is affected by the presence of crystal structure disturbances on the substrate surface

[en] The Cs-Sn phase diagram was fully built using the differential thermal analysis method. When cesium interacts with tin four compounds are formed according to peritectic reaction: Cs₂Sn, CsSn, CsSn₂ and CsSn₄ at temperatures of 565, 630, 875 and 580 deg C, respectively. The Cs-Sn system has a compound of the composition Cs₂Sn₃ displaying congruent melting at 930 deg C. Alloy stratification appears to occur in the system at the monotectic temperature of 605 deg C and tin concentration from 7.5 to 39 at.%

[en] Many authors have reported successful growth of epitaxial layers of CdTe on GaAs by means of molecular-beam epitaxy or gas-phase epitaxy with the aid of metalloorganic compounds (MOC) of cadmium and tellurium. Although the lattice period of CdTe is 14.6% greater than that of GaAs, as a rule in the interval 380-450 degree C one can obtain monocrystalline layers with satisfactory surface quality. To grow CdTe layers, GaAs substrates oriented in the planes (111) or (100) were used; however, no comparative analysis was made of the quality of the layers obtained on these substrates. Moreover, there are no literature data on the influence of the angle and direction of deviation of the substrate from the given crystallographic plane on the quality of the epitaxial layer. This present article to some extent fills this gap

[en] The influence of GaAs substrate orientation, composition of gas phase and temperature of deposition on surface morphology and stucture of CdTe heteroepitaxial layers was investigated. The assumption was made that deterioration of surface morphology reproducibility and structural perfection of CdTe layers on GaAs substrate, observed at the temperatures exceeding 430 deg C, is brought about by direct chemical interaction of the substrate and layer components

[en] Short note