[en] The ZnO-based ceramic films doped with different dopants were prepared by a novel sol-gel process. The phase composition of the films was determined via X-ray diffraction analysis. The influence of the dopants on the residual stress, carrier concentration and the secondary phases was studied by means of Raman spectroscopy. Raman spectra show that the E₂ phonon frequency shifts 3-6 cm^-1 to lower wavenumbers, whereas the A_1(LO) mode shifts 3.2-6.1 cm^-1 to higher wavenumbers when the films were doped with Bi₂O₃, Sb₂O₃, MnO, Cr₂O₃, Y₂O₃ and Al₂O₃, indicating that both the tensile residual stress and the free carrier concentration were increased with doping. The larger stress is considered to originate from the lattice distortion, which was caused by the substitution of the doping ions for Zn²⁺, and the lattice mismatch between the ZnO crystals and the interfacial phases. The secondary phases were affected markedly by both Y₂O₃ and Al₂O₃. The intensity and the position of Raman bands of Zn₇Sb₂O₁₂ and ZnCr₂O₄ phases changed obviously. The films showed remarkable nonlinear voltage-current characteristics, but the nonlinear coefficient of the films decreased evidently as the addition of Y₂O₃ or Al₂O₃

[en] SiO₂-doped Ba_0.85Sr_0.15TiO₃ (SBST) glass-ceramic (g-c) films with perovskite structure have been prepared on Pt/Ti/SiO₂/Si substrates by sol-gel technique. Differential thermal analysis (DTA), X-ray diffraction (XRD) and atomic force microscopy (AFM) are employed to analyze the synthesize process and microstructure of SBST g-c films. The ferroelectricity and crystallization behavior of SBST films are discussed. It is found that the starting synthesize temperature of SBST15 film is larger than that of pure barium strontium titanate (BST) film for about 60 deg. C. The grain sizes decrease and the ferroelectricity of SBST g-c films is degenerated, but their loss tangent and leakage current density decrease with increasing SiO₂ contents. The temperature coefficient of dielectric (TCD) and the pyroelectric coefficient γ of the films are measured. The results show that TCD and the pyroelectric coefficient γ of SBST5 film at 20-25 deg. C are, respectively, 4.6% deg. C^-1 and 8.1x10^-8 C cm^-2 K^-1, which is about 2/3 value of the pure BST films. BST g-c film with 5 mol% SiO₂ dopant is hopeful to be the advanced candidate material for uncooled infrared focal plane arrays (UFPAs) applied at near room temperature

[en] The effect of annealing temperature on the electrical properties of low voltage ZnO-based ceramic films was studied by a novel sol-gel process. The experiment results show that Zn₇Sb₂O₁₂ and ZnCr₂O₄ phase can form in a lower annealing temperature (550 deg. C) by the solution doping, and the pyrochlore phase is not detected by X-ray diffractometer (XRD) from 550 deg. C to 950 deg. C. Sb₂O₃ phase can change to spinel phase completely; Bi₂O₃ and ZnO may be vaporized when the annealing temperature reaches 750 deg. C. The ZnO-based ceramic films with nonlinear coefficient of 20, nonlinear voltage of 5 V and the leakage current density of 0.5 μA/mm² can be gained at the proper annealing temperature