[en] Single crystals and epitaxial films of SiC - 4H and 6H were implanted at an energy of 40 and 90 KeV by ions of Al at various temperatures and high dose. The implanted layers were studied before and after annealing by Raman scattering, Auger electron spectroscopy and SIMS. Results of this investigation show intensive graphitization of the implanted layer surface, the formation of great associations of defects in the implanted layer and shallow defects. It was found that recrystallization of the implanted layer pushes out a considerable part of aluminum atoms. The nature of the processes in silicon carbide during implantation and annealing is discussed

[en] The p-n structures was formed by the implantation of Al ions into 6H-SiC n-type films and thermal annealing. The energy range for ions was 40--90 KeV, and the annealing temperature was 1,700--2,100K. The authors investigated the influence of implantation conditions over the defects electroluminescence of the obtained structures. After fabricating contacts and mesa-structures with areas 500 · 500μm the devices under the current of 20 mA showed: integral light power 20μW, λ_max = 535 nm, δλ_max = 80 nm. For the first time, the green electroluminescence source on SiC was fabricated with the value of efficiency approximated to one of the A³B⁵ structures. After encapsulating it will be possible to obtain LEDs with an integral light power up to 80--100μW

[en] High-quality high-temperature superconducting films of YBa₂Cu₃O_1-x with the thickness up to 2.6 μ can be obtained by dc magnetron sputtering. It is revealed that CuO and YBa₂Cu₃O₈ inclusions coexist with a growing film and serve as sinks for defects, nonstoichiometric atoms and mechanical stresses. Methods of X-ray diffraction and Rutherford backscattering analyses are applied to state that under suggested process conditions the structural perfection of films increases with their thickness

[en] Possibility to produce YBa₂Cu₃O_7-δ high-temperature superconductor up to 2.6 μm thickness high-quality films via magnetron sputtering at direct current was shown. Inclusions containing CuO and YBa₂Cu₃O₈ were detected to coexist with a growing film and to be a drain for defects , nonstoichiometric atoms and mechanical stresses. By means of X-ray diffraction and the Rutherford backward scattering it was determined that under the proposed process condition the structure perfection of films was improved with thickness increase

[en] Experimental studies on initial stages of growth of the YBCO films obtained through the method of magnetron spraying with the constant current on the Al₂O₃ substrate with CeO₂ sublayer, are carried out. Islands of the YBa₂Cu₄O₈ and CuO phases are identified on the substrates surfaces. Their concentration varies during the first two second of spraying nonmonotonously within the limits of 10⁷-10⁹ cm^-2. The average size of the islands changes within the limits of 300-500 A

[en] Investigation results are presented on properties of YBCO films up to 3.6. μm thick produced at deposition rate of 15 A/min in a DC planar magnetron system. Methods of X ray diffraction analysis, electron microscopy and Rutherford backscattering were used for structural and morphological studies of film surface. Optimal conditions of superconducting thick film manufacture are determined

[en] The evolution processes in the ensembles of the YBa₂Cu₃O_7-x and CuO phase islet films, formed at the initial stage of the process of the high-Tc films depositions, are studied. All basic characteristics of the above films: the law of changing the islets radius and their surface concentration on the deposition time, the islets distribution by size, are plotted. It is shown that the evaporation-condensation mechanism is the basic mass-transfer mechanism in the islet films both in the YBa₂Cu₄O₈ and Cu O phases. The laws of changing the molecule fluxes of barium, copper and yttrium oxides, enabling the control of the high-Tc structure and composition, are determined

[en] The initial stage of growth of the YBa₂Cu₃O_7-x superconducting superfine (1.7-7.3 nm) films on the SrTiO₃ (100) substrate and the effect of technological regimes on the realized film growth type are considered. The characteristics of the obtained films are studied through the method of the H⁺ ions scattering with the energy of 190 keV. The film average thickness and its chemical composition are determined. It is established that the film growth may proceed by two-dimensional model with formation of smooth islands as well as by the ternary model with high dispersion of the coating thickness. It is determined that the islands growth is critical to changes in the growth conditions