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[en] Experimental data on the electric conductivity, thermoelectromotive force, Hall factor and transverse Nernst-Ettinshausen effect in weak magnetic fields were obtained in the temperature range between 77 and 300 K for a series of single crystal specimens of p-Pbsub(0.65)Snsub(035)Te grown from the vapour phase at current carrier concentrations between 1.73x10¹⁸ and 2.14x10²⁰ cm^-3. The inversion of the sign of the thermoelectromotive force was discovered on the low-temperature isotherms of the concentration dependence of the thermoelectromotive force at high hole concentrations. The temperature and the concentration dependences of the effective hole mass were determined. The concentration dependence was used to calculate the dispersion law, which was found to feature a heavily un-parabolic character at p< 2x10¹⁹ cm^-3, whereas at higher hole concentrations the law could be described by a parabolic relationship between the energy and the quasi-pulse

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[en] A study was made on dependences of properties of lead-tin telluride crystals on amount of addition of superstoichiometric tellurium, introduced into the crystal just from the charge during its growing. It is shown that redundanr tellurium, itroduced into initial charge, is partially suppressed by crystallization front and partially remains in the cystal in the form of precipitates. Compensating Sb addition, introduced into the crystal through the charge, is used, in the first place, for interaction of these precipitates with Te: this part of addition doesn't manifest electric activity. Sb, used for crystal matrix alloying is characterized by electric activity

[en] Single crystals of Pbsub(0.82)Snsub(0.18)Te solid solution of p-type conductivity grown by the vapour phase method were investigated. Experimental data were obtained on concentration dependences of coefficients of thermal emf and the transverse Nerst-Ettinghausen effect in zero and weak magnetic fields. Concentration dependence of the effective mass of state density at the Fermi level was calculated at 90 K. The dependence of current carrier energy on the wave vector was calculated and generalized on the basis of the latter. The experimental data were compared with calculations for different scattering mechanisms taking into account empirically determined dispersion law

[en] The Cd impurity is studied for its influence on the free charge carrier concentation in PbTe crystals during their dopping in the process of growth depending on the amount of Te precepitates in them. It is determined that the excess of Te essentially decreases effectivity of the donor action of Cd in these materials. A variation of the free carrier concentration by this method of doping is in many cases considerably smaller than concentration of the introduced impurity. Possible reasons of the Cd donor action in PbTe are analysed

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[en] Density and lattice parameter distribution along a monocrystal, as well as the Hall effect, electric conductivity, Hall mobility of n-Pb_1-x-Sn_xTe_1-ySe_y monocrystals grown by the Bridgman method within the temperature interval from 77 to 400 K and 10¹⁷-10¹⁸ cm^-3 concentrations are investigated. It is established that the lattice parameter doesn't change along the ingot, and density is constant only in its middle part. x and y values are determined. The thermal width of the forbidden zone at 0K, agreed well with calculation, is estimated by the Hall effect. Analysing Hall mobility, it is established that lattice thermal oscillations make main contributions to scattering of charge carriers

[en] The temperature dependence of the optical width of the forbidden band of single crystals (PbSe)sub(1-x)(SnTe)sub(x) with an initial hole density of p=4x10¹⁸cm, grown by the Bridgman method, at x=0.01,0.03 and 0.05 was studied. The observed range of the negative temperature coefficient is due to the position of the Fermi level in the valency band. Some increase of this range is due to the reduction in the effective mass of current carriers with decreasing of the forbidden band width as a result of a change in the composition of the solid solution