[en] Nuclear forensics requires accurate quantification of discriminating microstructural characteristics of the bulk nuclear material to identify its process history and provenance. Conventional metallographic preparation techniques for bulk plutonium (Pu) and uranium (U) metals are limited to providing information in two-dimension (2D) and do not allow for obtaining depth profile of the material. In this contribution, use of dual-beam focused ion-beam/scanning electron microscopy (FIB-SEM) to investigate the internal microstructure of bulk Pu and U metals is demonstrated. Our results demonstrate that the dual-beam methodology optimally elucidate microstructural features without preparation artifacts, and the three-dimensional (3D) characterization of inner microstructures can reveal salient microstructural features that cannot be observed from conventional metallographic techniques. Examples are shown to demonstrate the benefit of FIB-SEM in improving microstructural characterization of microscopic inclusions, particularly with respect to nuclear forensics.

[en] We have used a 45 μJ laser pulse to accelerate the free surface of fine-grained tantalum films up to peak velocities of ∼1.2 km s"−"1. The films had thicknesses of ∼1–2 μm and in-plane grain widths of ∼75–150 nm. Using ultrafast interferometry, we have measured the time history of the velocity of the surface at different spatial positions across the accelerated region. The initial part of the histories (assumed to correspond to the “elastic precursor” observed previously) exhibited measured strain rates of ∼0.6 to ∼3.2 × 10"9" s"−"1 and stresses of ∼4 to ∼22 GPa. Importantly, we find that elastic amplitudes exhibit little variation with strain rate for a constant peak surface velocity, even though, via covariation of the strain rate with peak surface velocity, they vary with strain rate. Furthermore, by comparison with data obtained at lower strain rates, we find that amplitudes are much better predicted by peak velocities rather than by either strain rate or sample thickness.

[en] Inducing superconductivity in a topological insulator can lead to novel quantum effects. However, experimental approaches to turn a topological insulator into a superconductor are limited. We report on superconductivity in topological insulator Bi_0.91Sb_0.09 induced via focused ion-beam deposition of a Pt thin film. The superconducting phase exhibits a Berezinski-Kosterlitz-Thouless transition, demonstrative of its two-dimensional character. From the in-plane upper critical field measurements, we estimate the superconducting thickness to be ~ 17 nm for a 5.5-μm-thick sample. Our results provide evidence that the interface superconductivity could originate from the surface states of Bi_0.91Sb_0.09.

[en] Planarizing or smoothing over nodular defects in multilayer mirrors can be accomplished by a discrete deposit-and-etch process that exploits the angle-dependent etching rate of optical materials. Typically, nodular defects limit the fluence on mirrors irradiated at 1064 nm with 10 ns pulse lengths due to geometrically- and interference-induced light intensification. Planarized hafina/silica multilayer mirrors have demonstrated > 125 J/cm"2 laser resistance for single-shot testing and 50 J/cm"2 for multi-shot testing for nodular defects originating on the substrate surface. Two planarization methods were explored: thick planarization layers on the substrate surface and planarized silica layers throughout the multilayer in which only the silica layers that are below one half of the incoming electric field value are etched. This paper also describes the impact of planarized defects that are buried within the multilayer structure compared to planarized substrate particulate defects. - Highlights: • Defect planarization significantly improves multilayer mirror laser resistance • Substrate and coating defects have both been effectively planarized • Single and multishot laser resistance improvement was demonstrated