[en] Investigations are performed on variation of surface structure on exposure to H₂⁺, He⁺, Kr⁺, Xe⁺ ions with subsequent annealing. By means of the MIM-7 microscope and replica technique the damage developing on the surface is studied. Based on comparison with reports on studies of desorption and gas generation processes an assumption is made of possibility of migration of bubbles of inert gases and emergence of them on the surface of sample. (author)

No abstract available

[en] An investigation is presented of the generation and development of defects in 4.5μ tungsten films bombarded by approximately 1 MeV helium ions (2.10¹⁶-7.10¹⁶cm^-2.) at specimen temperatures Tsub(irra)=100⁰C and 1000⁰C. The films irradiated at 100⁰C are annealed at Tsub(an)=1000 to 1600⁰C. As the irradiation dose increases, the dislocation structure develops from ''black points'' to dislocation loops and dislocation network. On annealing up to 1400⁰C, the appearance of gas bubbles is observed. When irradiated at elevated temperature the bubbles begin to form at 1000⁰C

[en] Short note

[en] Electron microscopic study of the films preexposed to 1 MeV helium ions was staged. The exposure dose was 8x10¹⁶ cm^-2 at approximately 1.000 deg C. An ordered arrangement of helium bubbles was observed. Determined were the bubble lattice parameters as well as the bubble radius-lattice period ratio. The obtained results are compared with the results of other investigations

No abstract available

[en] Short note

[en] Investigations of temperature effect on the OKh16N15M3B stainless steel surface damage have been carried out during its irradiation by helium ions with energies of 0.3-1.8 MeV in the temperature range of 100-970 deg C. Three types of failures are shown to be observed on the surface as a result of irradiation: blisters, flaking and hole structure. The maximal erosion from irradiation by high-energy helium ions is observed in the temperature range of 100-500 deg C and constitutes 0.4-2.0 at/ion for the investigated energy range

[en] Generalization of data available in literature and obtained by authors has showed that in spite of the fact that some of the obtained results correspond to the criteria elaborated for equilibrium systems, the most data on implanted impurity location do not correspond to these criteria. Location of impurity atoms which are not solved in matrice under equilibrium conditions is determined in case of their ion implantation by three processes: spontaneous recombination of impurities with vacancies within the cascade collision relaxation phase, capture of additional vacancies during the cascade cooling phase and capture of migrating vacancies at temperatures higher than that in stage III. 57 refs.; 18 figs.; 6 tables. (author)

[en] Method of backscattering of channeled ions is used to investigate evolution of Xe implanted ion distribution profiles, and also the accumulation and evolution of radiation defects produced in Ni single crystal (110) under irradiation with 630 KeV Xe⁺ and 300 KeV Kr⁺ ions to doses of 1x10¹⁵ to 5x10¹⁶ sm^-2 and 5x10¹⁶ to 1x10¹⁷ sm^-2, respectively, with a subsequent 100 deg C-step annealing in the temperature range from 20 to 1000 deg C