[en] Short communication

[en] Redistribution of nitrogen implanted to silicon at 600-1100 deg C temperatures with 135 keV energy is investigated. Nitrogen distribution in depth is studied by the Rutherford backscattering (RBS) of He⁺ ions with 1.5 MeV energy as well as by means of the Auger spectroscopy with layer-by layer cathode sputtering. Analysis of the results has shown that the temperature of defect formation suppression when bombarding with nitrogen ions is 900 deg C. It leads to nitrogen motion to the surface at temperatures higher than 900 deg C. Increase of the ion dose promotes the accumulation of a large number of effective sinks and that's why even at 900 deg C and at dose 3x10¹⁷ cm^-2 nitrogen concentration for a narrow peak at the depth of average ranges is observed. 4 refs.; 3 figs

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[en] n-type silicon (4.5 Ohmxcm)(100) was irradiated with 10¹³-5x10¹⁵ cm^-2 dose boron ions with E=30 keV at 600-1100 deg C. Boron electrical activation degree, impurity distribution in depth and structural perfection of layers depending on radiation dose and temperature were investigated. Under equal doses ''hot'' irradiation and introduction at 20 deg C with subsequent annealing up to the same temperature activate boron equally according to its solubility. Irradiation temperature T_i=900 deg C is sufficient for complete boron activation up to ∼ 10¹⁵ cm^-2 dose, in this case the layers appear to be free from residual defects, observed after low-temperature introduction with subsequent annealing. T_i=1000 deg C is sifficient for complete boron activation in the whole dose interval investigated, and electron microscopy does not reveal any disturbances in the layers. Sufficient penetration of impurity inside, reaching 1.5 μm takes place with T_i growth. Calculations of doping profiles in the assumption of vacancy diffusion acceleration agree well with the experiment. For T_i=900 deg C the maximum increase of boron diffusion coefficient makes up 10⁴ times. Boron difuses quickly in concentrations which do not exceed its solubility in lattice points. The excessive impurity is immobile, electrically inactive and is concentrated at the depth of the mean ion passage

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[en] Computerized simulation of the accelerated diffusion of impurities implanted in silicon under high tenmperature is conducted. Diffusion equations are solved using finite difference technique (it is assumed that diffusion acceleration results from excessive point defects and is proportional to variation of their concentration with depth). Calculation profiles are compared with experimental ones obtained due to implantation of boron and phosphorus ions under 900 deg C by 3x10¹³ - 10¹⁶ cm^-2 range dose set. Alloyage shown to agree phosphorus ion intrusion are shown to agree well with calculations at L_d=0.5 μm value of point defect diffusion length

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[en] Hall measurements, SIMS and TEM have been used for investigation of the silicon surface irradiated with 1.7-7 keV gallium ions at the target temperatures 550-950 deg. It is shown that ''hot'' irradiation produces in a controllable manner heavily doped p-type several hundred nanometers thick surface layers. Penetration of impurity atoms far beyond the mean ion ranges is attributed to the radiation enhanced diffusion under the ''hot'' ion bombardment (ion injection). The injected impurity atoms were found to be completely electrically active. TEM of injected layers reveals no structural damage, inherent to conventional ion implantation with high temperature post bombardment annealing

No abstract available