[en] A deep band of {311} defects was created 520 nm below the silicon surface with a 350 keV Si implant followed by a cluster-forming rapid thermal anneal (800 C, 1000 s). Chemical etching was used to vary the depth to the surface of the {311}-defect band. Afterwards, the defect dissolution was investigated at 750 C for different times. Varying the depth in this fashion assures that only the depth and no other feature of the cluster distribution is changed. The {311} defects were analyzed by plan-view, transmission electron microscopy. We show that the dissolution time of the {311}-defect band varies linearly with depth, confirming that surface recombination controls the dissolution and is consistent with analogous observations of transient enhanced diffusion

[en] We have measured the evolution of the excess-vacancy region created by a 2 MeV, 10¹⁶/cm² Si implant in the silicon surface layer of silicon-on-insulator substrates. Free vacancy supersaturations were measured with Sb dopant diffusion markers during postimplant annealing at 700, 800, and 900 C, while vacancy clusters were detected by Au labeling. We demonstrate that a large free vacancy supersaturation exists for short times, during the very early stages of annealing between the surface and the buried oxide (1 μm below). Afterwards, the free vacancy concentration returns to equilibrium in the presence of vacancy clusters. These vacancy clusters form at low temperatures and are stable to high temperatures, i.e., they have a low formation energy and high binding energy

[en] It has been shown recently that Au labeling [V. C. Venezia, D. J. Eaglesham, T. E. Haynes, A. Agarwal, D. C. Jacobson, H.-J. Gossmann, and F. H. Baumann, Appl. Phys. Lett. 73, 2980 (1998)] can be used to profile vacancy-type defects located near half the projected range ((1/2) R_p) in MeV-implanted Si. In this letter, we have determined the ratio of vacancies annihilated to Au atoms trapped (calibration factor ''k'') for the Au-labeling technique. The calibration experiment consisted of three steps: (1) a 2 MeV Si⁺ implant into Si(100) followed by annealing at 815 degree sign C to form stable excess vacancy defects; (2) controlled injection of interstitials in the (1/2) R_p region of the above implant via 600 keV Si⁺ ions followed by annealing to dissolve the {311} defects; and (3) Au labeling. The reduction in Au concentration in the near-surface region (0.1-1.6 μm) with increasing interstitial injection provides the most direct evidence so far that Au labeling detects the vacancy-type defects. By correlating this reduction in Au with the known number of interstitials injected, it was determined that k=1.2±0.2 vacancies per trapped Au atom. (c) 2000 American Institute of Physics

[en] In this work we demonstrate that the defects that are created by 2-MeV Si ions can interact with dopant atoms both during implantation and during post-implant annealing. We show that the interstitials and vacancies created during MeV Si implantation result in a radiation enhanced diffusion of B and Sb markers, respectively, when the temperature of implantation is above the threshold temperature for formation of mobile dopant complexes. With the use of these dopant markers we also demonstrate that a vacancy-rich near surface region results during post-implant annealing of MeV implanted silicon. The depth distribution and the thermal evolution of clustered vacancies was measured by a Au labeling technique