[en] With x-rays produced by photon exciting elemental and compounds targets, the mass attenuation coefficients have been systematically measured for Cu, Fe, Sn, Y, SiH₄ and Si in the x-ray energy range of 1.4 KeV to 29 KeV. The photoelectric cross sections have been obtained by subtracting thermal diffuse scattering and Compton scattering cross section from the measured total cross sections and compared with the theoretical results. Refs and tabs

[en] Superconducting film is prepared by implanting high dose As ions with 150 keV into Nb film on the microcrystallite glass substrates, and annealing at the temperature of 800 deg C for 30 minutes in the vacuum of 1.3 x 10^-5 Pa. The superconducting transition temperature, T_C, equals 6.6K. The thickness of implantation layer is about 67 nm. The concentration profile of arsenic in the implantation layer is measured by iterative subtracting backscattering spectrum method. The concentration ratio of Nb atom to As atom, N_Nb/N_As=2.2, is obtained. Consequently, the sample is not an ideal Nb₃As of Ti₃P configuration but a Nb rich superconductor film of Nb(As). However, its superconducting transition temperature is higher than that of Nb₃As of Ti₃P type. The latter's transition temperature is 0.3 K only

[en] X-ray attenuation coefficients have been determined for copper in the energy range 3.3-27.8 keV using X rays produced by 2.5 MeV proton beam excitation of elementary targets or compound targets and Si(Li) detector system. The experimental uncertainties of attenuation coefficiencts have been reduced to 1% for intensive isolated chraracteristic X rays. The total photoelectric cross sections, obtained by subtracting scattering, have been compared with the theoretical compilations of Scofield

[en] By using the characteristic X-ray sources and the Si(Li) detector system, the X-ray mass attenuation coefficients for Si, Fe, Cu, Y, In, Sn and SiH₄ have been systematically measured in the energy range of 1.486∼29.109 keV. The accuracy of experimental data has been reduced to +-1%

[en] Presented is a method to form a crowded vertical PN junction in the surface layer of a solar cell by ion implantation. After the processing the distance from the light-generated carrier to the PN junction is shortened and the collection efficiency of the cell is improved. A new type anti-irradiation solar cell has been developed

[en] Using a new type X-ray source produced by proton excitation of elementary or compound targets and Si(Li) detector system, mass attenuation coefficients of Tin have been determined for the energy range from 3.3 to 29.1 keV. The experimental uncertainties of attenuation coefficients have been reduced to +- 1% for intense isolated characteristic X-rays. The total photoelectric cross sections have been obtained by subtracting scattering cross sections from the measured total cross sections

[en] Using a new type X-ray source produced by proton excitation of elementary or compound targets and Si(Li) detector system, mass attenuation coefficients of tin have been determined for the energy range from 3.3 to 29.1 KeV. The experimental uncertainties of attenuation coefficients have been reduced to ±1 % for intenser isolated characteristics X-rays. The total photoelectric cross sections have been obtained by subtracting scattering cross sections from the measured total cross sections. (author). 24 refs, 1 fig., 3 tabs

[en] The mass attenuation coefficients of indium are systematically measured by using the characteristic X-rays from elemental or compound targets excited by energetic proton in the X-ray energy range 2.6 to 29.1 keV. The accuracy of experimental data is improved to be +- 1%. The photoelectric cross sections are obtained by subtracting the scattering cross section from the measured total cross sections. Comparisons of our experimental results with the available data of earlier investigations as well as with the theoretical calculations are presented and discussed

[en] By using monolithic parallel beam X-ray lens instead of the attachment slits or Soller slits, the X-ray intensities both incident on and diffracted from the sample can be 1.5-3.5 times than the original and a resolution of 0.4 degree can be reached, thus the diffractional setup with X-ray lenses can be used to analyse thin film, powder and ion beam deposit samples. By using the slightly focusing X-ray lens in the macromolecular crystallography, high pressure and four circle X-ray diffractometers and at the same electric power supply, the diffracted intensities can be raised 3-10 times than the traditional diffractional equipment. In addition the signal to noise ratio and the resolution can be improved to a certain extent

[en] The basic physical properties for monolithic X-ray lens are introduced. The X-ray diffraction for macromolecular crystallography using monolithic X-ray lens were investigated. The experimental results show that in the same X-ray source power the diffracted intensity in the condition with X-ray lens was increased about 7 times, and the resolution was improved by 0.2 x 10^-10-0.6 x 10^-10 m. The signal to noise ratio was also improved, and the time of measurement was reduced. The X-ray diffraction of Au thin films on the Si(100) single crystal substrates were investigated in a X-ray powder diffractometer. The experimental results show that in the same X-ray source power the diffracted intensity in the condition with X-ray lens was increased about 2 times, and the angular resolution of the diffractometer was enhanced