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AbstractAbstract
[en] Lockheed Martin federal systems has developed a state-of-the-art radiation tolerant 0,25 μm CMOS capability that is compatible with commercial foundries as well as radiation hardened fabrication. A technology test chip was designed, fabricated and evaluated for performance, power and radiation hardness in order to validate the methodology and evaluate the technology. Testing results show that -) the active transistor threshold shift is negligible for 0.25 μm CMOS, -) the hardened STI (shallow trench isolation) can support Mega-rad applications, and -) the holding voltage is well beyond the operating voltage of 2.5 V. This technology is intended to support high density, high performance and low power space applications
Original Title
Technology 0.25 μm tolerante aux radiations pour les applications spatiales
Primary Subject
Source
1999; [4 p.]; 5. European conference on radiation and its effects on components and systems; 5. congres europeen les radiations et leurs effets sur les composants et les systemes; Abbaye de Fontevraud (France); 13-17 Sep 1999
Record Type
Miscellaneous
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Conference
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