[en] The introduction and annealing behaviour of radiation defects in GaP and GaAssub(1-x)Psub(x) at 1 to 50 MeV electron irradiation was investigated by the Hall effect, thermal stimulated current (TSC) and optical absorption. The recovery of electrical properties of irradiated GaAssub(1-x)Psub(x) was dependent on x. From TSC measurement it has been shown that the predominant radiation defects in GaP are electron traps Esub(c) - (1.2 +- 0.1)eV and hole traps Esub(v) + (1.5 +- 0.15)eV which are the cause of n and p decreasing in GaP crystals. The formation of density state 'tails' during irradiation was investigated. (author)

[en] N- and p-type silicon Schottky barrier structures were bombarded with protons at temperatures between 10 and 300 K. Defect state profiles indicate long-range vacancy diffusion only for bombardment near room temperature. The observed stability and energy position of defect states are (V-O) and (V-P). Supplementary electron irradiations were performed at T > 77 K to provide correlation with earlier studies. Charge state and recombination influences on defect stability are discussed. (author)

[en] The paper presents the results of photoluminescence studies of CdSe crystals irradiated with electrons at temperatures 30 to 293 K. It has been found that irradiation at T > 100 K produces the 7153 A band. It has been demonstrated that formation of this band depends critically on irradiation temperature and beam current density. The lack of equivalence of the results of irradiation at T < 80 K followed by annealing and of irradiation at T > 100 K suggests that the production of edge emission bands results from ionisation or thermally stimulated migration of radiation defects. The growth of the 7153 A band is interpreted as the formation of an optically active centre formed by Vsub(Cd) and a chemical donor, due to long-range migration of Vsub(Cd). (author)

[en] The effects of room temperature electron irradiation on a series of CdTe crystals were investigated. These effects were monitored by luminescence measurements. A correlation appears between the growth on a line around 1.55 eV and doping with chlorine. Quantitative information was obtained from the excitation spectra of luminescence and temperature dependence of this donor-acceptor line. (author)

[en] Reorientations of negative divacancies are induced by linearly polarised infrared light with a wavelength of 3.6 μm, and by applying uniaxial stress. The orientations are observed directly in the Si-G7 EPR spectrum. The degree of alignment as a function of the direction of polarisation of the light has been studied. The characteristic time for the thermally activated anneal of this alignment is measured between 16 and 18.3 K, and is found to depend on the donor concentration; it has different values for the stress and the optically induced alignment. (author)

[en] The anomalous diffusion of implanted boron has been investigated when a shallow n⁺ diffusion is performed with phosphorus. For a low surface concentration of phosphorus (< 10¹⁹ cm^-3), no anomalous diffusion of boron was observed, but for 10²⁰ cm^-3 phosphorus, heavy diffusion occurred. The enhancement factor decreases when the distance between the phosphorus diffusion front and the implanted probe increases. The results are explained by the presence of point defects which are generated by phosphorus diffusion. (author)

[en] Annealing studies are reported in the temperature range 800 to 1500⁰C for the common colour centres created in type-I (nitrogen-containing) diamond by electron irradiation and annealing at 800⁰C. The concentrations of these centres, previously believed to be stable, are dramatically altered in this temperature range. Some of the changes are probably associated with vacancy-enhanced diffusion of the nitrogen. (author)

[en] Diamonds cut parallel to the <111> plane have been implanted with antimony at doses ranging from 3 x 10¹³ to 10¹⁶ ions cm^-2 at an energy of 350 keV. The extent and the nature of the damage created by the implantation and the annealing process were studied using optical absorption and electron paramagnetic resonance. (author)

[en] The effect of ionisation, during thermal annealing of 140 keV phosphorus implantation in n-type silicon, on the concentration and nature of the traps, obtained using a transient capacitance technique, is described. The concentrations of the four traps observed after thermal annealing are changed by the ionisation; new traps appear. The results are briefly discussed in terms of ionisation-enhanced annealing. (author)

[en] This review is mainly concerned with exploitation of the edge luminescence and optical absorption of II-VI semiconductors to provide information about the centres that control their extrinsic optoelectronic properties. A possible reconciliation is offered for the two apparently conflicting attributions of the broad self-activated luminescence in ZnS, either to intra- or intercentre transitions. This suggestion stems from comparison with the well established behaviour of an important axial centre in GaP. Particular attention is given to such generic similarities between semiconductors, including recent information on ZnO and CdTe, in addition to the main emphasis, i.e. recent work in ZnSe and ZnTe. The current understanding of shallow impurity-dominated acceptors in ZnSe and ZnTe is reviewed and clarified, including very recent data from the powerful techniques of luminescence excitation and resonantly excited luminescence spectroscopy obtained with continuously tunable dye lasers. The results are linked with the limited controllability of electrical properties of II-VI semiconductors. (author)