[en] The effect of 2 MeV electron bombardment at 300 K on the electrical (R, σ) properties of n- and p-CdGeAs₂ are studied. Specimens of n- and p-CdGeAs₂ are closely-compensated after sufficiently heavy electron bombardment, and have n-type conductivity with a resulting free electron density approximately 3 x 10¹⁷ cm^-3 at 300 K. Isochronal annealing experiments indicate two regions of restoring of R and σ, at about 300 to 450 K acceptor defect and at about 470 to 600 K donor defect annealing. (author)