[en] Germanium <100>, <110>, and <111> single crystals implanted with 46 keV Te ions with doses between 10₁₂ and 10₁₅ ions cm^-₂ have been analyzed by TEM of surface replicas, RHEED, and MeV He⁺ channelling. The combination of these types of measurements reveals the effect of crystalline orientation on heavy ion damage in a germanium lattice. The degree of disorder in the bulk, resulting from low dose implantation is lowest at <110> and <111> channelling and highest at <100> channelling. (author)