Multiple-gap tunneling structure observed for the high-T/sub c/ superconductors: Charging effects as possible cause
AbstractAbstract
[en] We have observed a tunneling structure for systems of the type Ag--barrier--metal particles--barrier--Ag, which shows gap structure and multiple-conductance peaks as a function of voltage which closely resembles the point-contact tunneling characteristics reported for the high-T/sub c/ superconductors. These data suggest that the appearance of multiple conductance peaks is not due to an intrinsic multiplicity of gaps in the high-T/sub c/ superconductors but to charging effects related to the granularity of the material
Record Type
Journal Article
Journal
Country of publication
Descriptors (DEI)
Descriptors (DEC)
Reference NumberReference Number
INIS VolumeINIS Volume
INIS IssueINIS Issue