[en] It has been shown that the neutron damage image as a divacancy D-cluster with a tetravacancy core adequately describes the neutron-induced effects observed in silicon grown by zone melting. Also it has been predicted that the decrease of total depletion voltage depends on the shrinkage of the outer part of space cluster charge when the doped impurity concentration exceeds the critical one. The expected value of the effect is determined by the factor ∼ [1-(r_n/r_cl)³]^-1, where r_cl and r_n are clusters radius and core radius, respectively