Effect of annealing on the structural and optical properties of AgGaS2 thin films prepared by pulsed laser deposition
AbstractAbstract
[en] The influence of annealing on the AgGaS2 films grown by pulsed laser deposition has been investigated. The X-ray diffraction results show the AgGaS2 films were found with preferential orientation (1 1 2) normal to the surface and silver droplets were diminished after the post-annealing. Photoluminescence (PL) measurements reveled the exciton energy is slightly red shifted that is possibly due to the thermal strain effect. The binding energy of the shallow donors is ∼28 meV determined from temperature dependent PL spectra. In addition, the A-exciton and the B/C-exciton could be observed in the transmittance spectra at room temperature
Primary Subject
Source
S0040609002007435; Copyright (c) 2002 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; Country of input: International Atomic Energy Agency (IAEA)
Record Type
Journal Article
Journal
Country of publication
Descriptors (DEI)
ANNEALING, BINDING ENERGY, DROPLETS, ENERGY BEAM DEPOSITION, EXCITONS, GALLIUM SULFIDES, LASER RADIATION, MEV RANGE 10-100, OPTICAL PROPERTIES, PHOTOLUMINESCENCE, PULSED IRRADIATION, SILVER, SILVER SULFIDES, SPECTRA, STRAINS, TEMPERATURE DEPENDENCE, TEMPERATURE RANGE 0273-0400 K, THIN FILMS, X-RAY DIFFRACTION
Descriptors (DEC)
CHALCOGENIDES, COHERENT SCATTERING, DEPOSITION, DIFFRACTION, ELECTROMAGNETIC RADIATION, ELEMENTS, EMISSION, ENERGY, ENERGY RANGE, FILMS, GALLIUM COMPOUNDS, HEAT TREATMENTS, IRRADIATION, LUMINESCENCE, METALS, MEV RANGE, PARTICLES, PHOTON EMISSION, PHYSICAL PROPERTIES, QUASI PARTICLES, RADIATIONS, SCATTERING, SILVER COMPOUNDS, SULFIDES, SULFUR COMPOUNDS, SURFACE COATING, TEMPERATURE RANGE, TRANSITION ELEMENT COMPOUNDS, TRANSITION ELEMENTS
Reference NumberReference Number
INIS VolumeINIS Volume
INIS IssueINIS Issue