Behzad Ebrahimi - researchr alias

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Viewing Publication 1 - 23 from 23

2025

Novel hybrid TFET-FinFET 12T SRAM cells with enhanced write margin and read performanceSeyed Arman Sabaghpour, Behzad Ebrahimi, Pooya Torkzadeh. integration, 100:102294, 2025. [doi]

2023

Accurate and Compact Approximate 4:2 Compressors with GDI StructureMohammad Ghanatabadi, Behzad Ebrahimi, Omid Akbari. cssp, 42(7):4148-4169, July 2023. [doi]

BEAD: Bounded error approximate adder with carry and sum speculationsAfshin Khaksari, Omid Akbari, Behzad Ebrahimi. integration, 88:353-361, 2023. [doi]

2022

A 1-GHz GC-eDRAM in 7-nm FinFET with static retention time at 700 mV for ultra-low power on-chip memory applicationsBahareh Seyedzadeh Sany, Behzad Ebrahimi. ijcta, 50(2):417-426, 2022. [doi]

2021

HPM: High-Precision Modeling of a Low-Power Inverter-Based Memristive Neural NetworkNegin Mohajeri, Behzad Ebrahimi, Massoud Dousti. jcsc, 30(15), 2021. [doi]

Single-Ended 10T SRAM Cell with High Yield and Low Standby PowerErfan Shakouri, Behzad Ebrahimi, Nima Eslami, Mohammad Chahardori. cssp, 40(7):3479-3499, 2021. [doi]

2019

Low-power data encoding/decoding for energy-efficient static random access memory designGhasem Pasandi, Kolsoom Mehrabi, Behzad Ebrahimi, Sied Mehdi Fakhraei, Ali Afzali-Kusha, Massoud Pedram. iet-cds, 13(8):1152-1159, 2019. [doi]

2016

Read static noise margin aging model considering SBD and BTI effects for FinFET SRAMsKolsoom Mehrabi, Behzad Ebrahimi, Roohollah Yarmand, Ali Afzali-Kusha, Hamid Mahmoodi. mr, 65:20-26, 2016. [doi]

2015

2014

Robust FinFET SRAM design based on dynamic back-gate voltage adjustmentBehzad Ebrahimi, Ali Afzali-Kusha, Hamid Mahmoodi. mr, 54(11):2604-2612, 2014. [doi]

2013

An analytical model for read static noise margin including soft oxide breakdown, negative and positive bias temperature instabilitiesBehrouz Afzal, Behzad Ebrahimi, Ali Afzali-Kusha, Hamid Mahmoodi. mr, 53(5):670-675, 2013. [doi]

Robust polysilicon gate FinFET SRAM design using dynamic back-gate biasBehzad Ebrahimi, Ali Afzali-Kusha, N. Sehatbakhsh. dtis 2013: 171-172 [doi]

2012

2011

Statistical Design Optimization of FinFET SRAM Using Back-Gate VoltageBehzad Ebrahimi, Masoud Rostami, Ali Afzali-Kusha, Massoud Pedram. tvlsi, 19(10):1911-1916, 2011. [doi]

A partial-SOI LDMOSFET with triangular buried-oxide for breakdown voltage improvementMehdi Saremi, Behzad Ebrahimi, Ali Afzali-Kusha, Saeed Mohammadi. mr, 51(12):2069-2076, 2011. [doi]

2010

A Microfabricated Phantom for Quantitative MR Perfusion Measurements: Validation of Singular Value Decomposition Deconvolution MethodBehzad Ebrahimi, Scott D. Swanson, Timothy E. Chupp. tbe, 57(11):2730-2736, 2010. [doi]

2008

Low Standby Power and Robust FinFET Based SRAM DesignBehzad Ebrahimi, Saeed Zeinolabedinzadeh, Ali Afzali-Kusha. isvlsi 2008: 185-190 [doi]

2007

The effect of noise and depolarization on hyperpolarized tracers perfusion assessmentBehzad Ebrahimi, Scott D. Swanson, Timothy E. Chupp. isbi 2007: 137-140 [doi]

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