James P. Ashton, Patrick M. Lenahan, Daniel J. Lichtenwalner, Aivars J. Lelis. Leakage Currents and E' Centers in 4H-SiC MOSFETs with Barium Passivation. In 2020 IEEE International Reliability Physics Symposium, IRPS 2020, Dallas, TX, USA, April 28 - May 30, 2020. pages 1-4, IEEE, 2020. [doi]
Abstract is missing.