Physicist | Data Scientist | Quantum | Semiconductor | Superconductor | AI Enthusiast | Optical Engineer
📢 "Record-Breaking Performance in 2D Channel Transistors: Intel Corporation's Advances with Ultra-Thin Materials for Next-Gen Electronics" 📌 2D Material Innovation:Intel Corporation is exploring ultra-thin transition metal dichalcogenides (TMDs), like MoS2 and WSe2, which are monolayer materials only an atomic layer thick. These materials show promising electrical performance for extremely scaled devices. 📌 Challenge of Integration: Interfacing TMDs with other materials in device structures is difficult due to the absence of atomic-level "dangling bonds" that would allow easier bonding, presenting challenges in optimization. 📌Technological Breakthroughs: 📍 Intel achieved breakthroughs using: 💡 Gate Oxide Atomic Layer Deposition (ALD): A unique process for depositing gate oxide layers. 💡Low-Temperature Gate Cleaning: Ensures cleaner gate contacts. 📌Performance Metrics: 💡MoS2 GAA NMOS Transistors: Achieved subthreshold slope of less than 75mV/dec and a maximum drain current (Idmax) of over 900 µA/µm with a gate length under 50nm. 💡WSe2 PMOS Device: Using ruthenium for source and drain contacts, Intel reached a subthreshold slope of 156mV/dec and an Idmax of 132 µA/µm with a gate length around 30nm. https://lnkd.in/eJ5Rw6a2 #2DMaterials #TMDs #TransitionMetalDichalcogenides #MoS2 #WSe2 #Nanotechnology #Semiconductors #IntelInnovation #GateOxide #AtomicLayerDeposition #GAADevices #TransistorTechnology #AdvancedElectronics #FutureTech #MaterialScience #NanoElectronics #ElectricalPerformance #CleanroomTechnology #DeviceIntegration #TechBreakthroughs
