Freakbyte’s Post

Liquid crystals (LCs) have been adopted to induce tunable physical properties that dynamically originated from their unique intrinsic properties responding to external stimuli, such as surface anchoring condition and applied electric field, which enables them to be the template for aligning functional guest materials. We fabricate the fiber array from the electrically modulated (in-plain) nematic LC template using the chemical vapor polymerization (CVP) method. Under an electric field, an induced defect structure with a winding number of −1/2 contains a periodic zigzag disclination line. It is known that LC defect structures can trap the guest materials, such as particles and chemicals. However, the resulting fibers grow along the LC directors, not trapped in the defects. To show the versatility of our platform, nanofibers are fabricated on patterned electrodes representing the alphabets ‘CVP.’ In addition, the semifluorinated moieties are added to fibers to provide a hydrophobic surface. The resultant orientation-controlled fibers will be used in controllable smart surfaces that can be used in sensors, electronics, photonics, and biomimetic surfaces. Artical source: https://lnkd.in/ggJ2Qgzc

𝗔 𝗽𝗼𝗹𝘆𝗺𝗲𝗿–𝘀𝗲𝗺𝗶𝗰𝗼𝗻𝗱𝘂𝗰𝘁𝗼𝗿–𝗰𝗲𝗿𝗮𝗺𝗶𝗰 𝗰𝗮𝗻𝘁𝗶𝗹𝗲𝘃𝗲𝗿 𝗳𝗼𝗿 𝗵𝗶𝗴𝗵-𝘀𝗲𝗻𝘀𝗶𝘁𝗶𝘃𝗶𝘁𝘆 𝗳𝗹𝘂𝗶𝗱-𝗰𝗼𝗺𝗽𝗮𝘁𝗶𝗯𝗹𝗲 𝗺𝗶𝗰𝗿𝗼𝗲𝗹𝗲𝗰𝘁𝗿𝗼𝗺𝗲𝗰𝗵𝗮𝗻𝗶𝗰𝗮𝗹 𝘀𝘆𝘀𝘁𝗲𝗺𝘀. Active microelectromechanical systems (MEMS) with integrated electronic sensing and actuation can provide fast and sensitive measurements of force, acceleration and biological analytes. Strain sensors integrated onto MEMS cantilevers are widely used to transduce an applied force to an electrical signal in applications like atomic force microscopy and molecular detection. However, the high Young’s moduli of traditional MEMS materials, such as silicon or silicon nitride, limit the thickness of the devices and, therefore, the deflection sensitivity that can be obtained for a specific spring constant. Here, the authors show that polymer materials with a low Young’s modulus can be integrated into polymer–semiconductor-ceramic MEMS cantilevers that are thick and soft. The authors develop a multi-layer fabrication approach so that high-temperature processes can be used for the deposition and doping of piezoresistive semiconductor strain sensors without damaging the polymer layer. The present trilayer cantilever exhibits a sixfold reduction in force noise compared to a comparable self-sensing silicon cantilever. Furthermore, the strain-sensing electronics in the present system are embedded between the polymer and ceramic layers, which makes the technology fluid-compatible. https://lnkd.in/eMX_3nhQ

🗞 Electronic News! 🗞 Light diffusers have long been used in various applications, but conventional designs have limitations when it comes to controlling the optical directivity of the diffused light. Researchers have now introduced a groundbreaking solution - an electrically tunable light diffuser that leverages ultrasound technology in a nematic liquid crystal material. The ultrasonic LC diffuser is a sophisticated structure consisting of an LC layer sandwiched between two glass discs and an ultrasonic transducer. By dividing the electrodes of the transducer in a circumferential direction, a resonant non-coaxial flexural vibration mode can be induced on the diffuser through precise control of electrical input signals. #electricalengineering #electronics #embedded #embeddedsystems #electrical #computerchips Follow us on LinkedIn to get daily news: HardwareBee - Electronic News and Vendor Directory

#Selective #operation of #enhancement and #depletion #modes of #nanoscale #field-#effect #transistors by— #SRM #Institute of #Science and #Technology Nanoscale transistors are in demand for efficient digital circuits, and biasing of each device is critical. These stringent biasing conditions can be relaxed by obtaining precise values of the threshold voltages of the #transistor. This leads to more tolerant logic states to the electrical noise. To meet the requirements of reduced power consumption, #CMOS field-effect transistors (FETs) are fabricated such that they operate in enhancement (E) mode, i.e., there are no free charge carriers in the channel at zero gate voltage. On the other hand, depletion (D) mode transistors have higher currents than enhancement mode due to ample charge carrier density. In contrast to switching applications of FET, for high-frequency applications, off-state of FET is not a compulsory requirement. In fact, the presence of a channel at zero gate bias is advantageous to obtain high transconductance at lower voltages. For #Si FETs, the enhancement or depletion modes were determined at the fabrication step of ion implantation doping. However, it is challenging to implement this solution for the new generation of thin materials like organic semiconductors and #2D #materials. According to new #research #published(https://lnkd.in/gk25svVe) in #ACS #Applied #Electronic #Materials, by choosing a particular work function for a gate metal, threshold voltages of the #p-type FETs can be changed from negative to positive values, which is selective switching between the enhancement mode and depletion mode of operation. Semiconductor Nation - Campus Connect #FET #FETs #OFETs phys.org #Details: ⤵️ https://lnkd.in/gEbsgmbS

🔦Why choose Silicon Nitride (SiN) waveguide chips for your next photonic integrated circuit (PIC) application? 1️⃣ Low Propagation Loss SiN waveguides are known for their low propagation losses, crucial for high-performance PICs where signal attenuation needs to be minimized to maintain signal integrity over long distances. ℹ️Our TriPleX® waveguides have ultra low propagation losses, 0.1 dB/cm down to 0.1 dB/m.. 2️⃣ Wide Transparency Window SiN waveguides exhibit low optical loss across a broad wavelength range, from near-ultraviolet to infrared (400 nm to 2350 nm). This wide transparency window supports high optical power handling & makes them versatile for applications in telecommunications, bio-sensing, quantum and many more. 3️⃣ Integration Flexibility SiN can be integrated with various other materials, which allows for the design of complex and multifunctional photonic circuits. ℹ️SiN TriPleX® waveguides excel in integrating with active components for light emission, amplification, or detection, enhancing their versatility across fields such as life sciences, sensing, metrology, and telecom/datacom. ➡️Discover more about SiN TriPleX® waveguide technology : https://lnkd.in/ePYTmWxH

#BilayerGrapheneonSiO2/Si Product Overview Single-crystal #graphene refers to graphene material that exhibits the structural characteristics of a single crystal. Graphene itself is a two-dimensional material composed of a single layer of carbon atoms, while single-crystal graphene emphasizes the highly ordered and defect-free arrangement of its atoms, granting it superior physical properties. There are various methods for preparing single-crystal graphene, primarily including chemical vapor deposition (CVD), mechanical exfoliation, and epitaxial growth. This product is prepared using the mechanical exfoliation method, also known as the "Scotch tape method," first introduced by Novoselov and others in 2004 when they successfully produced monolayer graphene. This method uses the friction and relative movement between tape and bulk material to detach thin layers from the bulk. The adhesive force of the tape overcomes the weak van der Waals forces between the molecular layers, enabling the separation of layers. Although the yield of this method is relatively low, it produces high-purity monolayer graphene. The process is well-suited for laboratory research, as mechanical forces are used to peel graphene from graphite. Technical Specifications Substrate: SiO2/Si Substrate size: 2 × 2 cm SiO2 thickness: 300 nm Total sample area: > 10,000 μm² Product Features High Conductivity: Due to the absence of grain boundaries and defects, electron transport in single-crystal graphene is smoother, significantly improving its conductivity. High Thermal Conductivity: Its perfect structure also grants single-crystal graphene excellent thermal conductivity. High-Quality Optical Properties: It allows for low-distortion optical transmission, providing possibilities for the development of optical devices. Applications Electronics: With its high conductivity and high-quality optical properties, single-crystal graphene holds significant value in the manufacturing of electronic devices, such as high-speed electronics and photodetectors. Energy: In the energy storage field, single-crystal graphene can improve the energy density and cycle stability of batteries. Its excellent thermal conductivity also aids in battery thermal management. Information Technology: In IT, single-crystal graphene can be used to develop high-performance sensors, transistors, and other components. info@graphenerich.com https://lnkd.in/gmEPaCAH

Data storage, volatile and non-volatile, has been a hot topic – not just since "Moore's Law". As a result of the trend towards ever smaller and more versatile electronic devices, the demand for #microelectronics and miniaturised components that can control or take over a switching process is greater than ever and will continue to increase in the coming years. The present invention enables now for the first time to fix and activate a desired spin crossover complex as a #monomolecular unit on a defined surface. As a result of this successful surface application, customised opto-electronic high-performance components can now be produced in miniaturised form. With this technology a single molecule can be activated on a defined surface. This could boost data storage density immensely, as one bit can now essentially be reduced to a single molecule. Such #MolecularSpintronics are seen as a potential successor to today's silicon technology. Conceivable applications for spin-switchable materials lie in the field of sensor technology, data storage or miniaturisation of switchable components. Of particular significance is the capability to switch back and forth between the two states using two laser pulses of different colours, known as the #LIESST effect. In principle, this enables a component to have response times of a billionth of a second. This development represents a real breakthrough in terms of a real technological application of this class of compounds, as the conditions have been created for a ‘molecular spintronics’. #DataStorage #Monolayer #Spintronics #TUWtech

Have you ever felt an electric shock when closing the door of your car? That's what we call electrostatic discharge (ESD). That "zap" can damage electronics but we have #EMC standards that makes sure these "zaps" can't cause any serious damage. In reality, ESD can happen even before you touch the electronics (we call non-contact ESD). This involves a very complex plasma physics, but we have outstanding (and exclusive :) technology in our tool #Ansys Charge Plus tool that handles extreme complexity solving the full plasma non-contact ESD event using a non-linear air chemistry module. Here we have a ESD gun close to an electronics assembly (package, PCB and interposer) and we can see how the electromagnetic fields propagate through the device depending on air humidity and pressure.  

Detection technologies in port Radiation detection technologies have been in use for over 100 years. Their use as a homeland security tool, particularly in ports, is relatively new. detector technology has advanced from gas-filled tube detectors (like Geiger counters), to Scintillation Crystal detectors, and most recently solid-state semiconductor detectors. Despite these advances, port applications still face engineering challenges, due to geometry var iances and environmental factors.” Some of the technologies just don't lend themselves to the task in ports because they are small and therefore do not pick up enough of the energy. Other technologies cannot be adapted to the harsh port environment. Some sensors only identify the presence of radiation, while other sensing technologies, combined with sophisticated electronics and software algorithms, can also identify the isotopes. #radioprotect

Advanced materials, especially atomically thin ones crucial for microelectronics, face unique challenges like thermal expansion discrepancies. Los Alamos National Lab's breakthrough using four-dimensional scanning electron microscopy to measure tungsten diselenide's expansion coefficient directly is a game-changer. This method overcomes prior limitations, offering precise insights into how these materials behave under heat. In microelectronics, where even minor thermal changes can affect performance, understanding thermal expansion is vital. The study's findings align two-dimensional tungsten diselenide’s behavior closely with bulk materials, crucial for predicting performance and reliability in real-world applications. This innovation not only advances material science but also underscores the critical role of precise measurement tools in pushing the boundaries of microelectronics. Imagine AI-driven simulations optimizing these materials for cooler, faster, and more efficient devices. #AdvancedMaterials #Microelectronics #FourDimensionalMicroscopy #ThermalExpansion #AIApplications