Liz Xu’s Post

🔦Why choose Silicon Nitride (SiN) waveguide chips for your next photonic integrated circuit (PIC) application? 1️⃣ Low Propagation Loss SiN waveguides are known for their low propagation losses, crucial for high-performance PICs where signal attenuation needs to be minimized to maintain signal integrity over long distances. ℹ️Our TriPleX® waveguides have ultra low propagation losses, 0.1 dB/cm down to 0.1 dB/m.. 2️⃣ Wide Transparency Window SiN waveguides exhibit low optical loss across a broad wavelength range, from near-ultraviolet to infrared (400 nm to 2350 nm). This wide transparency window supports high optical power handling & makes them versatile for applications in telecommunications, bio-sensing, quantum and many more. 3️⃣ Integration Flexibility SiN can be integrated with various other materials, which allows for the design of complex and multifunctional photonic circuits. ℹ️SiN TriPleX® waveguides excel in integrating with active components for light emission, amplification, or detection, enhancing their versatility across fields such as life sciences, sensing, metrology, and telecom/datacom. ➡️Discover more about SiN TriPleX® waveguide technology : https://lnkd.in/ePYTmWxH

Understanding the Substrate in CMOS Technology In the world of Complementary Metal-Oxide-Semiconductor (CMOS) technology, the substrate is like the foundation of a house. It's the base layer upon which all the electronic components are built. Typically, this foundation is made of a single crystal of silicon. Most often, it's a p-type substrate, but you can also find n-type substrates. In most cases, the substrate in CMOS chips is made with low resistance. Typically, the resistance is about 10 ohms per centimeter. So, for a tiny chip that's 1mm by 1mm, the resistance from one side to the other is only about 1 ohm. That's pretty low! The reason we usually use low-resistance substrates is that it's cheaper to make them. Very often it would be very beneficial to have high resistive substrate for the following reasons: Reduced leakage current: A high-resistivity substrate can help to minimize leakage current between devices, improving their performance and power efficiency. Improved isolation: High-resistivity substrates can provide better isolation between devices, reducing crosstalk and improving device reliability. Lower noise: High-resistivity substrates can help to reduce noise in the device, which is particularly important for sensitive analog circuits. While we might not have complete control over the substrate used in a foundry process, understanding its characteristics is crucial for optimizing our designs. Understanding the properties and limitations of the substrate is essential for designing reliable and high-performance CMOS devices.

Reactive Plasma Etching (RPE) is critical in fabricating Very Large Scale Integrated (VLSI) circuits. It involves the removal of material from a substrate using a chemically reactive plasma. This technique has become indispensable due to its ability to achieve high precision, anisotropy, and selectivity, which are paramount in creating the intricate patterns required for modern microelectronic devices.  https://lnkd.in/gkjrrYZF

For several years now, our #nanosecond #tunable #lasers have been utilized in research measuring time-resolved photoconductivity (#TRMC), providing the precise and reliable #light sources needed for these studies. 💡 TRMC are key techniques used to perform the contactless determination of carrier density, transport, trapping, and recombination parameters in charge transport materials such as organic semiconductors and dyes, inorganic semiconductors, and metal-insulator composites, which find use in conductive inks, thin-film transistors, light-emitting diodes, photocatalysts, and photovoltaics. The behavior of photoconductivity with photon energy, light intensity and temperature, and its time evolution and frequency dependence, can reveal a great deal about carrier generation, transport and recombination processes. Many of these processes now have a sound theoretical basis and so it is possible, with due caution, to use photoconductivity as a diagnostic tool in the study of new electronic materials and devices.

In the present work, two-dimensional (2D) hexagonal photonic crystal ring resonator (PCRR) structure is designed for both pressure and temperature sensing based on effective refractive index modulation of silicon. The nanosensor is designed to monitor the pressure from 0.04 to 6 GPa and temperature from 5 to 540 °C. The proposed nanosensing platform is composed of hexagonal PCRR and two inline quasi-waveguides in a 2D hexagonal lattice with circular rods arranged in air host. The hexagonal PCRR is playing a very important role in sensing the different pressure and temperature levels over a wide dynamic range. The plane wave expansion method (PWE) is implemented to calculate photonic band gap (PBG), which is used to identify the operating wavelength range of the sensor. The functional parameters of the sensor are evaluated by finite-difference time-domain method (FDTD). The functional parameters are the dynamic range, resonant wavelength, sensitivity, transmission efficiency, and quality factor. The FDTD results show that the resonant wavelength of the PCRR is red shifted with increasing the pressure and temperature. The designed sensor offers high sensitivity, high transmission efficiency and good quality factor with ultra-compact size; hence, it is extremely suitable for nanotechnology-based sensing applications. https://lnkd.in/gEdNm_Qj

In electronic technologies, key material properties change in response to stimuli like voltage or current.

𝗔 𝗽𝗼𝗹𝘆𝗺𝗲𝗿–𝘀𝗲𝗺𝗶𝗰𝗼𝗻𝗱𝘂𝗰𝘁𝗼𝗿–𝗰𝗲𝗿𝗮𝗺𝗶𝗰 𝗰𝗮𝗻𝘁𝗶𝗹𝗲𝘃𝗲𝗿 𝗳𝗼𝗿 𝗵𝗶𝗴𝗵-𝘀𝗲𝗻𝘀𝗶𝘁𝗶𝘃𝗶𝘁𝘆 𝗳𝗹𝘂𝗶𝗱-𝗰𝗼𝗺𝗽𝗮𝘁𝗶𝗯𝗹𝗲 𝗺𝗶𝗰𝗿𝗼𝗲𝗹𝗲𝗰𝘁𝗿𝗼𝗺𝗲𝗰𝗵𝗮𝗻𝗶𝗰𝗮𝗹 𝘀𝘆𝘀𝘁𝗲𝗺𝘀. Active microelectromechanical systems (MEMS) with integrated electronic sensing and actuation can provide fast and sensitive measurements of force, acceleration and biological analytes. Strain sensors integrated onto MEMS cantilevers are widely used to transduce an applied force to an electrical signal in applications like atomic force microscopy and molecular detection. However, the high Young’s moduli of traditional MEMS materials, such as silicon or silicon nitride, limit the thickness of the devices and, therefore, the deflection sensitivity that can be obtained for a specific spring constant. Here, the authors show that polymer materials with a low Young’s modulus can be integrated into polymer–semiconductor-ceramic MEMS cantilevers that are thick and soft. The authors develop a multi-layer fabrication approach so that high-temperature processes can be used for the deposition and doping of piezoresistive semiconductor strain sensors without damaging the polymer layer. The present trilayer cantilever exhibits a sixfold reduction in force noise compared to a comparable self-sensing silicon cantilever. Furthermore, the strain-sensing electronics in the present system are embedded between the polymer and ceramic layers, which makes the technology fluid-compatible. https://lnkd.in/eMX_3nhQ

In electronic technologies, key material properties change in response to stimuli like voltage or current.

Perovskites enter the wide band gap mainstream for high power electronics. Article: https://lnkd.in/gTwGty6A Underlying paper: https://lnkd.in/gT7QdmMn Abstract Exploration and advancements in ultrawide bandgap (UWBG) semiconductors are pivotal for next-generation high-power electronics and deep-ultraviolet (DUV) optoelectronics. Here, we used a thin heterostructure design to facilitate high conductivity due to the low electron mass and relatively weak electron-phonon coupling, while the atomically thin films ensured high transparency. We used a heterostructure comprising SrSnO3/La:SrSnO3/GdScO3 (110), and applied electrostatic gating, which allow us to effectively separate charge carriers in SrSnO3 from dopants and achieve phonon-limited transport behavior in strain-stabilized tetragonal SrSnO3. This led to a modulation of carrier density from 1018 to 1020 cm−3, with room temperature mobilities ranging from 40 to 140 cm2 V−1 s−1. The phonon-limited mobility, calculated from first principles, closely matched experimental results, suggesting that room temperature mobility could be further increased with higher electron density. In addition, the sample exhibited 85% optical transparency at a 300-nm wavelength. These findings highlight the potential of heterostructure design for transparent UWBG semiconductor applications, especially in DUV regime.

Jingxian Li, Yiyang Li and collaborators used electrical measurements, scanning probe microscopy, and first-principles calculations on tantalum oxide memristors. They revealed that the formation and stability of conductive filaments crucially depend on the thermodynamic stability of the amorphous oxygen-rich and oxygen-poor compounds, which undergo composition phase separation. Including the previously neglected effects of this amorphous phase separation reconciles unexplained discrepancies in retention and enables predictive design of key performance indicators such as retention stability. This result emphasizes non-ideal thermodynamic interactions as key design criteria in post-digital devices with defect densities substantially exceeding those of today’s covalent semiconductors. #Matter https://lnkd.in/eUMjnvZq