Rahul Sharma’s Post

【Examining NiPS3: Properties, Application, and Challenges】 Full article: https://lnkd.in/gs6JWHCB (Authored by Jake Huang, from Polytechnic School, USA.) Because of its tunable bandgap, excitonic behavior, antiferromagnetism, and anisotropic conductivity, two-dimensional van der Waals (vdW) material, nickel-phosphorus trisulfide (#NiPS3), is a very promising candidate for optoelectronics, #spintronics, and energy conversion applications. This work explores some of the fundamental aspects defining the excitonic behavior of NiPS3, such as bandgap characteristics, antiferromagnetism, and semiconductor nature derived from its layered structure. #2D_Materials #Bandgap_Engineering #Semiconductors #Materials_Science 

【Modeling the Physical Parameters of Solenoids for MEMS Applications】 Full article: https://lnkd.in/gQrdqqks (Authored by Mykhaylo Andriychuk, et al., from Lviv Polytechnic National University (Ukraine), etc.) The #solenoids are applied usually for interconnection of movable (plunger) and stationary (fixed) parts of the micro electromechanical systems (MEMS), which are the series-fabricated integrated microdevices. The performance of solenoids are defined by the electromagnetic system, materials, its geometry, magnetic permeability of material, resistance of winging, inductance of coil, friction of parts, and so on. This paper presents the modeling results related to study the electrical properties of the solenoids used for MEMS applications. #Motion_Microdevice #Stored_Energy 

Uncover the untold story of thyristors: Are they still a vital component in today's electronic landscape? Dive into our latest article to discover the surprising answer! #Thyristors #Electronics #Technology https://lnkd.in/gy9cENkT

Unleashing the Full Potential of GaN HEMTs: Overcoming the Dispersion Hurdle Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs) hold immense promise for RF and power applications due to their impressive material properties. However, a hidden roadblock – DC-to-RF dispersion – emerges in real-world amplifier operation. This phenomenon, linked to internal traps within the device structure, throws a wrench into GaN HEMTs' peak performance. What's the Catch? Imagine a scenario where your GaN HEMT amplifier delivers less RF output power than expected. This power reduction manifests in two key ways: Knee Walkout: Under RF operation, the minimum voltage required for the transistor to operate (drain voltage) dips compared to DC conditions. This "knee" in the device's performance curve signifies a limitation in its ability to handle RF signals effectively. Current Collapse (CC): In contrast to knee walkout, CC refers to a situation where the maximum achievable RF current (drain current) falls short of its DC counterpart. This translates to a reduced capacity for the transistor to deliver strong RF signals. Why Does This Matter? Both knee walkout and CC act as bottlenecks, hindering GaN HEMTs from reaching their full potential in RF applications. This dispersion phenomenon essentially limits the device's ability to handle high voltages and currents efficiently, thereby restricting its output power and overall performance. The Road Forward The quest for unlocking the true power of GaN HEMTs lies in conquering DC-to-RF dispersion. Researchers are actively exploring strategies to mitigate this effect, including: Material Engineering: Optimizing the GaN structure itself to minimize the formation of internal traps that contribute to dispersion. Design Tweaks: Tailoring the design parameters of GaN HEMTs to reduce the impact of trapping effects on RF performance. Join the Conversation! Have you encountered DC-to-RF dispersion in your work with GaN HEMTs? Share your experiences and insights in the comments below. Let's discuss the ongoing efforts to overcome this challenge and unlock the full potential of GaN technology in the exciting world of RF and power applications. #GaNHEMTs #RFpower #dispersion #knee walkout #currentcollapse

The third of our several #2Dsemiconductor strain papers this year came out last Friday. Lauren Hoang (co-advised with Andrew Mannix) led this study, and found that Ni contacts impart strain to monolayer WS2, improving its electron mobility and contact resistance. Many groups use Ni contacts, which seems to have reasonably low contact resistance despite its non-ideal work function. The built-in strain appears to play an important role in this! This is related to earlier work led by Marc Jaikissoon, who found similar effects with Ni-capped Au contacts to MoS2 (see https://lnkd.in/gQ9KZB4j). The size of the contacts and the annealing history (i.e. thermal budget) also matter! All these things are very relevant for the fate of #2Dmaterials in electronics, because controlling strain at the nanoscale is something that the silicon industry already knows how to do. Lauren's work is out in Nano Letters: https://lnkd.in/gs28-aFH

📄 My latest work entitled "Modeling I-MOS Capacitor C-V Characteristic for Non-Linear Charge Sensitive Amplifiers" has been just published on IEEE Xplore in the 2024 19th Conference on Ph.D. Research in Microelectronics and Electronics (PRIME) proceedings.

𝗣𝗼𝘄𝗲𝗿 𝗲𝗹𝗲𝗰𝘁𝗿𝗼𝗻𝗶𝗰𝘀 𝗮𝗿𝗲 𝗺𝗲𝗮𝗻𝘁 𝘁𝗼 𝗴𝗲𝘁 𝘄𝗮𝗿𝗺 🌡️: 𝗲𝗻𝘀𝘂𝗿𝗲 𝘁𝗲𝗺𝗽𝗲𝗿𝗮𝘁𝘂𝗿𝗲-𝘀𝘁𝗮𝗯𝗹𝗲 𝗽𝗲𝗿𝗳𝗼𝗿𝗺𝗮𝗻𝗰𝗲 𝘄𝗶𝘁𝗵 𝗡𝗔𝗡𝗢𝗣𝗘𝗥𝗠® 𝗵𝗶𝗴𝗵 𝘁𝗲𝗺𝗽𝗲𝗿𝗮𝘁𝘂𝗿𝗲 𝗰𝗼𝗿𝗲𝘀 🧲! At the Curie temperature, a material loses its magnetic properties, which is typically around ~200°C for MnZn Ferrites. However, the saturation induction and the permeability of these ferrites can change substantially with temperature much before that. In contrast, our nanocrystalline material -NANOPERM®- exhibits excellent temperature stability; the Curie temperature is over 400°C, and the magnetic properties are extremely stable over the entire temperature range. Check out our high-temperature catalog 📖 : https://lnkd.in/d5F-fqxd and contact us now (https://lnkd.in/d7bhx9CZ) if you are looking for stable temperature performance in your electronics, and we will help you find a solution! #Innovation #Technology #Powerelectronics #Nanocrystalline

The SEMISHARE H Series Probe Station with Laser System integrates laser cutting for selective material removal, supporting applications such as chip failure analysis, I-V/C-V testing, RF/mmW testing, high-voltage/high-current testing, optoelectronic device testing etc.. Its large handle ensures easy and comfortable operation. Software-controlled cutting parameters enable rapid positioning and precise cutting with a minimum size of 1 μm, effectively meeting the precision processing requirements of scientific research. read more： https://lnkd.in/g_KzuNJD #Semishare #RF #Waferprobersystem #scientificresearch #Chiptest #lasersystem #lasercutting #failureanalysis #laser

#Review 📜 Inchworm Motors and Beyond: A Review on Cooperative Electrostatic Actuator Systems by Almothana Albukhari and Ulrich Mescheder 🔗 https://lnkd.in/gUK8WwXX MDPI; Furtwangen University; The University of Freiburg #cooperativeactuators #electrostaticactuator #inchwormmotor #electrostaticmotor #microsystems #MEMS #Abstract Having benefited from technological developments, such as surface micromachining, high-aspect-ratio silicon micromachining and ongoing miniaturization in complementary metal–oxide–semiconductor (CMOS) technology, some electrostatic actuators became widely used in large-volume products today. However, due to reliability-related issues and inherent limitations, such as the pull-in instability and extremely small stroke and force, commercial electrostatic actuators are limited to basic implementations and the micro range, and thus cannot be employed in more intricate systems or scaled up to the macro range (mm stroke and N force). To overcome these limitations, cooperative electrostatic actuator systems have been researched by many groups in recent years. After defining the scope and three different levels of cooperation, this review provides an overview of examples of weak, medium and advanced cooperative architectures. As a specific class, hybrid cooperative architectures are presented, in which besides electrostatic actuation, another actuation principle is used. Inchworm motors—belonging to the advanced cooperative architectures—can provide, in principle, the link from the micro to the macro range. As a result of this outstanding potential, they are reviewed and analyzed here in more detail. However, despite promising research concepts and results, commercial applications are still missing. The acceptance of piezoelectric materials in some industrial CMOS facilities might now open the gate towards hybrid cooperative microactuators realized in high volumes in CMOS technology.

Spin Quantum Dot Light-Emitting Diodes Enabled by 2D Chiral Perovskite with Spin-Dependent Carrier Transport https://lnkd.in/gaf5Qs8U The paper demonstrates a spin quantum dot light-emitting diode (spin-QLED) using 2D chiral perovskite as a spin injection layer based on the chiral-induced spin selectivity (CISS) effect, enabling spin-dependent carrier transport. It operates at room temperature and zero magnetic field, achieving circularly polarized electroluminescence (CP-EL) with an asymmetric factor of 1.6 × 10^-2. The work highlights the potential of chiral materials in spintronics and quantum-based devices. How Setfos was used Setfos simulation was used to analyze the recombination center and carrier recombination rate distribution in the device, providing insights into the performance and guiding future improvements. more inforamation visit here:-https://lnkd.in/dUEV6saU #solarcell #perovskite #oled #tcad #mosfet #tfet #nanodevice #optoelectonics #microelectronics