PCIM Europe, PowerUP Podcasts, Electric Vehicles, Semiconductors and more!
Maurizio Di Paolo Emilio
Content Editor & Technical Writer | Ph.D in Physics | Power Electronics, Renewable Energy, Embedded Systems, Quantum Computing
Reliability and Quality Requirements for SiC and GaN Power Devices
Thursday, 11 May 2023, 12:10 pm - 12.50pm PCIM, Nuremberg, hall 7 at booth 7-480
This panel discussion will explore the main reliability challenges and solutions associated with wide-bandgap semiconductors such as #SiC and #GaN and related quality requirements for high-performance designs in multiple mission-critical applications. Each panelist will share their knowledge and experience with aspects like material quality, thermal management, high-power operation, qualification tests and long-term performance. #reliability #pcim2023
See you next week at PCIM! Looking forward to meeting you!
PowerUP PODCASTs
By Maurizio Di Paolo Emilio
Engineered Substrate Scales GaN to Higher Voltages
In this podcast with Cem Basceri, CEO and President of Qromis, we’ll talk about a novel strategy for expanding GaN’s production capacity in a non-silicon fabrication facility (Fab) to improve its application space.
Reducing the Energy Consumed by Household Appliances
In this podcast, I talk with Pulsiv CEO Darrel Kingham about how Pulsiv developed a patent solution to improve efficiency of power electronics.
Improving the Range and Charging Time with Sila’s Titan Silicon Anode Batteries for Electric Vehicles
By Saumitra Jagdale
Sila, a next-generation battery materials company, has announced that “Titan Silicon,” their new class of nano-composite silicon anode batteries will be available commercially and is now gearing up for mass production. EV batteries with Titan Silicon-based anodes can provide a longer charge time, with a 20% increase in range and charge time as low as 20 minutes. Their first customer, Mercedes-Benz, will use Titan Silicon in EQG G Wagon, Mercedes’ long-range Electric Version of the G-class which is expected to be on road by 2025. #electricvehicles
Design of hybrid PFC stage in WBG-based bidirectional onboard charger
By Stefano Lovati
Recommended by LinkedIn
The analysis of the hybrid bidirectional PFC for high-frequency onboard chargers has highlighted the advantages that wide bandgap semiconductors like GaN and SiC bring in high-frequency operations. #electricvehicles
A Buffer-Free Structure Boosts the Performance of GaN on SiC devices
By Maurizio Di Paolo Emilio
SweGaN has developed a novel design and an epitaxial process that eliminates the buffer layer in the GaN on SiC structure, improving device performance and reliability. #galliumnitride #siliconcarbide
Wolfspeed and ZF to open R&D center in Nuremberg, Germany, to optimize SiC technology
By Maurizio Di Paolo Emilio
Together with the planned Wolfspeed plant in Ensdorf, Saarland, the aim is to develop the two facilities to become the cornerstone of a new European Silicon Carbide technology network.
Infineon Breaks Ground on 300-mm Fab in Dresden
By Anne-Francoise Pelè
Infineon Technologies broke ground today on its new 300-mm fab in Dresden, Germany, less than six months after first announcing the project. Led by Infineon CEO Jochen Hanebeck, a delegation of EU and German officials gathered today to symbolically launch the construction of the €5 billion semiconductor plant.
Toshiba starts construction of 300mm wafer fabrication facility for power semiconductors
By Maurizio Di Paolo Emilio
The construction of the new factory will take place in two phases, with the production start of Phase 1 scheduled for within fiscal 2024. Toshiba