[en] Technique to make microstrip silicon detectors with <40X40 mm² sensitive area, with 10-100 μm strip width and with 50-200 μm step is described. Energy resolution at recording of α-particles constitutes approximately 30 keV

[en] The radiation effect on the noise characteristics of bipolar transistors (current, gain, base resistance and an equivalent noise charge) is studied. Several types of transistors of radiation resistance have been compared. Change in noise characteristics is shown to be caused mainly by dose dependence of a gain factor. The level of the absorbed dose, that determining the boundary of transistor KT399 application in fields of mixed radiation of accelerators has been determined experimentally. The level is 5x10⁴ rad. For transistors KT3127, KT391 the dose level of 640 krad can be considered acceptable. 12 refs.; 3 figs

[en] The dark current spectral density of photomultipliers FEhU-140, FEhU-85, FEhU-87 in the photodiode arrangement is shown to be of 1/f character. The instantaneous fluctuations of the dark current and photocurrent in FEhU-140 in the frequency range where flicker noise is dominating are found to be far from Gaussian ones. They are Gaussian ones in the higher frequency range, but with the dispersion differing from the Poisson flux of electrons. 13 refs.; 4 figs.; 1 tab

[en] The study of the low-noise preamplifier, which could be utilized to obtain short-duration response in the case when the detector in measurement circuit could be described be the capacitance of 100-1000 pF magnitude, is presented. 5 refs.; 4 figs

[en] The low-noise current-sensitive preamplifier for ionization calorimeters is proposed. The equivalent noise charge as a function of the input transmission line length is measured

[en] The dependence of the preamplifier equivalent noise charge (ENC) on the detector capacitance, shaping time and collector current of the head transistor is presented. The measurement results are in a good agreement with calculations based on a simple noise model, so tedious ENC measurements may be replaced by a simple selection of transistors on distributed base resistance and current gain factor and unsophisticated calculations. Soviet KT382 - type transistors have the same noise performance as the best Japan transistors NE578 and NE021 and it is possible to use it as a head transistor for nuclear electronics applications

[en] The technology of planar silicon detectors has been described. The characteristics of microstrip detectors have been studied on beams. The minimum ionization particles signal-to noise is 6 (FWHM). The full-scale prototypes of the detectors for 'Neptun' were made. 5 refs

[en] The low-noise preamplifier for semiconductor detectors and multiwire proportional chambers is described. Under zero detector capacitance it has the equivalent 3000 electrons noise charge (FWHM) and pulse response total length 15 nS. The four-channel amplifier has dimensions 50x20x3 mm. 3 refs

[en] The aim of the paper is to show that it is possible to obtain experimental data on the diffraction of charmed particles at the U-600 UNK. The MGU-IHEP-JINR collaboration has great methodical and technical starts which allow to prepare a corresponding experimental facility with minimum expenditures. At present is begun the detailed simulation of the facility the results of which creates the base for the proposed experiment

[en] The noise analysis for an ideal voltage amplifier with a time-variant filter has been performed. The filter has a F1-switch-F2 filter structure. Two types of F1 are considered: ideal differentiator and noise-whiter (w). Pulse response of F2 was varied. It is shown that in all cases the equivalent noise charge (ENC) is not better than for the optimum time-invariant filter. It is shown that for the case of W-switch-double integrator ENC is always 1.6 more than for the optimum filter. 7 refs.; 2 figs