Division of Electromagnetics and Nanoelectronics (EMN)’s Post

The growth of #GaN #epitaxy on GaN substrate presents a unique challenge, despite the material’s superior properties when compared to silicon. GaN epitaxy offers significant advantages in terms of band gap width, thermal conductivity, and breakdown electric field over silicon-based materials. This makes the adoption of GaN as the backbone for the third generation of semiconductors, which provide enhanced cooling, lower conduction loss, and improved performance under high temperatures and frequencies, a promising and crucial advancement for the photonic and micro-electronic industries. https://lnkd.in/ejQaScuX

Ultrahigh-mobility semiconducting epitaxial graphene on silicon carbide Hello everyone, I share with you the work of the team of Professor Walt A. de Heer at the University of Georgia (https://lnkd.in/eVSYDad4). They published an article in Nature in January 2024 entitled “Ultrahigh-mobility semiconducting epitaxial graphene on silicon carbide”. This work could bring us to a turning point in the field of electronics. This new epigraphene material would make it possible to : -The manufacture of transistors faster than those based on materials like silicon -Development of faster, smaller, more energy-efficient chips -Paving the way for flexible electronic devices -Offer better thermal management, contributing to -The dissipation of heat generated by electronic devices. -Positive implications for device durability and longevity. I summarized in broad terms the issues and the work carried out by the professor's team. To go more in depth into the subject you will find attached the link to the article. Source : https://lnkd.in/ewnf_VCn Good day. #graphene #epigraphene #semiconductor #nanoelectronics #silicon #siliconcarbide

congratulations to Chanchal Saraswat for her research work published in Microelectronics Journal https://lnkd.in/g_dR_-Pa In this study, the optimization of metal-semiconductor contacts to reduce the contact resistance of ohmic contacts on n-type 4H-SiC. The commonly used Ni/Au metal scheme served as a reference. Two novel metal schemes were introduced (i) incorporating a thin interfacial Au layer (2 nm) into Ni/Au, resulting in Au/Ni/Au, and (ii) introducing a thin intermediate barrier layer of Ta (20 nm) into Ni/Au, resulting in Ni/Ta/Au. Rapid thermal annealing (RTA) is performed at different temperatures and durations and the electrical characteristics of the contacts are measured

"Two-dimensional (2D) superconducting materials have been found to be promising for the development of miniaturized optoelectronic devices. To perform well while consuming less energy, however, these smaller devices require a higher gate capacitance (i.e., gates that can store more electrical charge in proportion to the voltage applied). One approach to boost gate capacitance without decreasing the thickness of gate insulators or gate dielectrics entails the use of insulating materials with a high dielectric constant (κ), such as hafnium oxide (HfO2). While this could be an advantageous solution, these materials have proved to be difficult to integrate with 2D semiconductors." #materialscience

We have demonstrated crack-free state-of-the-art AlN on planar silicon (111) substrates by MOCVD at KAUST. Crack-free high quality AlN epitaxy on silicon is one of the "holy grails" of heterogeneous epitaxy because of its significant impact and paramount challenges. It is promising for a wide range of crucial applications including power supply of data center racks for GPU and CPU, powertrain of electric vehicles, smart grids, photovoltaics, wind power, 5G/6G communication, mercury-free water and air purification etc. However, due to large thermal and lattice mismatch, AlN epitaxy on silicon often suffers severe tensile strain and thus cracking problems. Based on our years of MOCVD research on BN-AlN and BN-GaN alloys, we have utilized the alloy buffer layer in this study to provide sufficient compressive strain to counter the tensile strain. As a result, we have produced a 520 nm thick crack-free AlN film with high crystal quality, achieving full width at half maximum values of 0.2° and 0.3° for XRC (002) and (102). Great job by the team! KAUST (King Abdullah University of Science and Technology) KAUST Research KAUST Innovation KAUST CEMSE KAUST Semiconductors #semiconductor #ultrawide #bandgap #AlN #MOCVD #silicon #substrates Mingtao Nong Xiao Tang Che-Hao Liao Haicheng Cao Ting’ang Liu Zixian Jiang Dhanu Chettri Link to the paper: https://lnkd.in/eEJV2-F4

Some cool developments out of Nagoya University.   Researchers discovered that heating gallium nitride (GaN) with metallic magnesium (Mg) forms a unique superlattice structure.   This marks the first time that 2D metal layers have been successfully inserted into a bulk semiconductor, unveiling new avenues in semiconductor doping and elastic strain engineering. The team found that a certain lattice match between GaN and Mg significantly reduces the energy needed to create this structure, leading to a substantial enhancement in the electrical conductivity of GaN through hole transport.   This is meaningful given GaN's role in high-power density and fast-operating frequency applications, such as LEDs, laser diodes, and power electronics. This not only improves the performance of GaN-based devices but also contributes to a more energy-efficient and carbon-neutral future.   #Semiconductors #GalliumNitride #GaN #MaterialsScience #Nanotechnology #Innovation #Research #EnergyEfficiency #CarbonNeutral #LEDs #PowerElectronics #TechNews #ScientificBreakthrough #NagoyaUniversity   https://lnkd.in/gDUDShP7

This article discusses recent advancements in ferroelectric devices, emphasizing the integration of materials like hafnium zirconium oxide (HZO) in semiconductor technology. Ferroelectric materials exhibit a switchable polarization that can be used in different devices, such as ferroelectric field-effect transistors (FeFETs) and dynamic random-access memory (DRAM). The industry faces challenges in precisely controlling crystal structures and minimizing defects, which are critical for enhancing device performance, retention, and endurance. Collaboration between materials scientists and engineers is essential for optimizing these new devices and ensuring commercial viability. Please continue reading the full article under the following link: https://lnkd.in/gAjEX6DE #materials #materialsscience #materialsengineering #computationalchemistry #modelling #chemistry #researchanddevelopment #research #MaterialsSquare #ComputationalChemistry #Tutorial #DFT #simulationsoftware #simulation

This article discusses recent advancements in ferroelectric devices, emphasizing the integration of materials like hafnium zirconium oxide (HZO) in semiconductor technology. Ferroelectric materials exhibit a switchable polarization that can be used in different devices, such as ferroelectric field-effect transistors (FeFETs) and dynamic random-access memory (DRAM). The industry faces challenges in precisely controlling crystal structures and minimizing defects, which are critical for enhancing device performance, retention, and endurance. Collaboration between materials scientists and engineers is essential for optimizing these new devices and ensuring commercial viability. Please continue reading the full article under the following link: https://lnkd.in/gDZCY5WB #materials #materialsscience #materialsengineering #computationalchemistry #modelling #chemistry #researchanddevelopment #research #MaterialsSquare #ComputationalChemistry #Tutorial #DFT #simulationsoftware #simulation

Researchers at Peking University reviewed high-spin polymers' potential for next-gen optoelectronics and spintronics. These polymers, with unpaired electrons, have unique electronic and magnetic properties suitable for advanced devices. The review covers the theory, design, and applications of open-shell conjugated polymers, highlighting their stability, processability, and effectiveness in various technologies. Challenges remain in achieving optimal performance, but advancements in design and characterization promise significant improvements for future high-tech applications. For more details, you can read the full article here: https://lnkd.in/e4ph9ChU

Ultrawide bandgap aluminum nitride semiconductor has extremely high breakdown field, good thermal conductivity, and exceptional stability, making it ideal for next-generation power electronics and deep UV photonics. In our latest MOCVD research, we have studied epitaxial growth modes and conductivity modulation mechanisms of silicon-doped AlN on cost-effective sapphire substrates. We also investigated how compensated defects affect conductivity, a critical process towards controlled conductivity of this extremely large bandgap semiconductor. All the epitaxy and characterization works are done at KAUST Advanced Semiconductor Lab and KAUST Core Labs. Great job by our postdocs and students and appreciate collaboration with Prof Ying Wu. KAUST (King Abdullah University of Science and Technology) KAUST Research Translation & Partnerships KAUST Innovation KAUST CEMSE KAUST Semiconductors #semiconductor #wide #bandgap #epitaxy #MOCVD Haicheng Cao Mingtao Nong Che-Hao Liao Glen Isaac Maciel García Vishal Khandelwal Ying Wu https://lnkd.in/e48vit-c