Andrew Leckie’s Post

The semi space is always topic of discussion. ASML is the only company that produces and sells EUV systems for chip production. The High NA EUV weighs as much as two Airbus A320s and costs $350M! See below. By 2018, ASML was successful in deploying the intellectual property from the EUV-LLC after decades of developmental research. Extreme ultraviolet lithography (EUVL, also known as EUV) is a technology used in the semiconductor industry for manufacturing integrated circuits (ICs). It is a type of photolithography that uses extreme ultraviolet (EUV) light to create intricate patterns on silicon wafers. The Third Group

Find out what #semiconductor industry veteran Dr. Harry Levinson learned about tackling the challenges of future nodes and more complex devices from attending the recent SPIE Photomask Technology + EUV Conference. His latest blog recaps the key takeaways, including increasing use of pellicles for #EUV #lithography, advancements in multi-beam mask writing and high-NA EUV. https://bit.ly/3CV5Qiu Harry Levinson Aki Fujimura Christophe Fouquet Jan Willis David Moreno Semiconductor Engineering

It will be great to explore perovskite in detail with TEM analysis! Gene Liu Mike Chen! #TEM #perovskite

EUV lithography systems are now fully deployed in the high-volume manufacturing of leading edge semiconductor devices. In this paper, we review the performance of ASML’s current generation light sources in the field and preview the next step in EUV source performance for the NXE:3800 system. #ASML #EUV #Lithography #semiconductorindustry #semiconductormanufacturing #semiconductors #semiconductor

Background electron dose is important to measure in EUV lithography systems. Besides stochastic defectivity, across-wafer CD uniformity is also impacted. It is possible to do this measurement, may already have been done at TSMC: https://lnkd.in/g8gK_kKm

AlixLabs is an Atomic Layer Etching (ALE) company. ALE’s integration with EUV lithography and patterning processes enhances the precision, selectivity, and overall quality of semiconductor manufacturing. By enabling atomic-scale control and reducing defects, ALE supports the production of advanced semiconductor devices with increasingly smaller feature sizes and more complex architectures. 🔔 For a fab manufacturing a 3 nm logic node wafer, lithography and etching contribute to 45% of the total CO2 footprint - we want to change that! 🔎 For detailed insights and specific examples, check out this recent review paper in JVSTA (Open Source): https://lnkd.in/eXba7YV3 #ALEtch #Lithography #semiconductors

By combining ✔️ Nanoimprint Lithography (NIL)✔️ and ✔️Plasma Etching✔️, we can engineer GaN nanopillars which behave like nano-candles. These nanopillars provide the starting block for freestanding microLEDs. 🔎Photonics, 🔎Nanofabrication, 🔎III-V semiconductors.

𝐀 𝐁𝐢-𝐂𝐌𝐎𝐒 𝐞𝐥𝐞𝐜𝐭𝐫𝐨𝐧𝐢𝐜 𝐩𝐡𝐨𝐭𝐨𝐧𝐢𝐜 𝐢𝐧𝐭𝐞𝐠𝐫𝐚𝐭𝐞𝐝 𝐜𝐢𝐫𝐜𝐮𝐢𝐭 𝐪𝐮𝐚𝐧𝐭𝐮𝐦 𝐥𝐢𝐠𝐡𝐭 𝐝𝐞𝐭𝐞𝐜𝐭𝐨𝐫. Complimentary metal-oxide semiconductor (CMOS) integration of quantum technology provides a route to manufacture at volume, simplify assembly, reduce footprint, and increase performance. Quantum noise–limited homodyne detectors have applications across quantum technologies, and they comprise photonics and electronics. Here, the authors report a quantum noise–limited monolithic electronic-photonic integrated homodyne detector, with a footprint of 80 micrometers by 220 micrometers, fabricated in a 250-nanometer lithography bipolar CMOS process. The authors measure a 15.3-gigahertz 3-decibel bandwidth with a maximum shot noise clearance of 12 decibels and shot noise clearance out to 26.5 gigahertz, when measured with a 9–decibel-milliwatt power local oscillator. This performance is enabled by monolithic electronic-photonic integration, which goes below the capacitance limits of devices made up of separate integrated chips or discrete components. It exceeds the bandwidth of quantum detectors with macroscopic electronic interconnects, including wire and flip chip bonding. This demonstrates electronic-photonic integration enhancing quantum photonic device performance. https://lnkd.in/gVyHMUE4

What is Numerical Aperture (NA), and why is it a game-changer in (High-NA) EUV lithography? : https://lnkd.in/euNTf-BT Posted by Dr. Dr. Tim Rammler for TRUMPF Numerical Aperture (NA) is a fundamental parameter in optical systems, and in semiconductor manufacturing, it’s key to driving innovation. But what exactly does it mean, and how does it impact EUV lithography? NA is a defining parameter in lithography that determines how far we can advance in semiconductor manufacturing. High-NA EUV lithography is setting the stage for a new era in miniaturization, balancing technical benefits with economic potential as it reshapes the future of technology. #semiconductor #manufacturing #technology #innovation #chips  #semiconductormanufacturing #advancedtechnology #engineering #lithography #nanometer #research #development #AI  #mobileprocessors #EUV #DUV

The latest EUV work supported by TSMC showcases a resist based on a highly hydroxylated hafnium cluster which offers 36 nm pitch resolution at 30 mJ/cm2. As the cost of EUV light is very high because only 3–4% of the light is used for lithography, development of new EUV photoresists using low doses (<50 mJ cm−2) is given prior consideration. There was significant thickness loss and evidence of blurring. As there was no mask or hydrogen, there are no 3D-mask effects or EUV-induced plasmas, so secondary electrons are the main suspect for the blur and resist loss. https://lnkd.in/gdMV8rWF